Part Number:
SICW080N120Y-BP
Manufacturer:
Micro Commercial Co
Description:
SCHOTTKY DIODES
Series:
-
FET Type:
N-Channel
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
38A
Drive Voltage (Max Rds On, Min Rds On):
18V
Rds On (Max) @ Id, Vgs:
85mOhm @ 20A, 18V
Vgs(th) (Max) @ Id:
3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 18 V
Vgs (Max):
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds:
890 pF @ 1000 V
FET Feature:
-
Power Dissipation (Max):
220W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Package / Case:
TO-247-3
Stock:
0
Part Number:
SSM3K16CT-L3F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 20V 100MA CST3
Series:
π-MOSIV
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Rds On (Max) @ Id, Vgs:
3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:
1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
9.3 pF @ 3 V
FET Feature:
-
Power Dissipation (Max):
100mW (Ta)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Supplier Device Package:
CST3
Package / Case:
SC-101, SOT-883
Stock:
106068
Part Number:
TSM043NB04LCZ-C0G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
40V, 124A, SINGLE N-CHANNEL POWE
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
76 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4387 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220
Package / Case:
TO-220-3
Stock:
12000
Part Number:
IRF840APBF-BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 500V 8A TO220AB
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1018 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
4275
Part Number:
STB46N60M6
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 36A D2PAK
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
80mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
53.5 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
2340 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stock:
0
Part Number:
STB22N60DM6
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 600V 15A D2PAK
Series:
MDmesh™ M6
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
240mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20.6 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
130W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stock:
0
Part Number:
TK33S10N1L-LQ
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 100V 33A DPAK
Series:
U-MOSVIII-H
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
33A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9.7mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2250 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
175°C
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK+
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Stock:
4491
Part Number:
SIHD14N60ET4-GE3
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 600V
Series:
E
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
64 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1205 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
147W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Stock:
8880
Part Number:
APT18M100S
Manufacturer:
Microchip Technology
Description:
MOSFET N-CH 1000V 18A D3PAK
Series:
POWER MOS 8™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
1000 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
700mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
4845 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
625W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
D3PAK
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stock:
0
Part Number:
SQA602CEJW-T1_GE3
Manufacturer:
Vishay Siliconix
Description:
AUTOMOTIVE N-CHANNEL 80 V (D-S)
Series:
TrenchFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
5.63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
94mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
355 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
13.6W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerPAK®SC-70W-6
Package / Case:
PowerPAK® SC-70-6
Stock:
38394
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