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FETs, MOSFETs - Single (41758)

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Part Number:

SICW080N120Y-BP

Manufacturer:

Micro Commercial Co

Description:

SCHOTTKY DIODES

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    SiC (Silicon Carbide Junction Transistor)

  • Drain to Source Voltage (Vdss):

    1200 V

  • Current - Continuous Drain (Id) @ 25°C:

    38A

  • Drive Voltage (Max Rds On, Min Rds On):

    18V

  • Rds On (Max) @ Id, Vgs:

    85mOhm @ 20A, 18V

  • Vgs(th) (Max) @ Id:

    3.6V @ 5mA

  • Gate Charge (Qg) (Max) @ Vgs:

    41 nC @ 18 V

  • Vgs (Max):

    +22V, -8V

  • Input Capacitance (Ciss) (Max) @ Vds:

    890 pF @ 1000 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    220W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-247-3

  • Package / Case:

    TO-247-3

Stock:

0

1

Part Number:

SSM3K16CT-L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET N-CH 20V 100MA CST3

  • Series:

    π-MOSIV

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    100mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.5V, 4V

  • Rds On (Max) @ Id, Vgs:

    3Ohm @ 10mA, 4V

  • Vgs(th) (Max) @ Id:

    1.1V @ 100µA

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    9.3 pF @ 3 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    100mW (Ta)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    CST3

  • Package / Case:

    SC-101, SOT-883

Stock:

106068

1

Part Number:

TSM043NB04LCZ-C0G

Manufacturer:

Taiwan Semiconductor Corporation

Description:

40V, 124A, SINGLE N-CHANNEL POWE

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    16A (Ta), 124A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    4.3mOhm @ 16A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    76 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4387 pF @ 20 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2W (Ta), 125W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220

  • Package / Case:

    TO-220-3

Stock:

12000

1

Part Number:

IRF840APBF-BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 500V 8A TO220AB

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    500 V

  • Current - Continuous Drain (Id) @ 25°C:

    8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    850mOhm @ 4.8A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    38 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1018 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    125W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

4275

1

Part Number:

STB46N60M6

Manufacturer:

STMicroelectronics

Description:

MOSFET N-CH 600V 36A D2PAK

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    36A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    80mOhm @ 18A, 10V

  • Vgs(th) (Max) @ Id:

    4.75V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    53.5 nC @ 10 V

  • Vgs (Max):

    ±25V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2340 pF @ 100 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    250W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-263 (D2PAK)

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Stock:

0

1

Part Number:

STB22N60DM6

Manufacturer:

STMicroelectronics

Description:

MOSFET N-CH 600V 15A D2PAK

  • Series:

    MDmesh™ M6

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    15A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    240mOhm @ 7.5A, 10V

  • Vgs(th) (Max) @ Id:

    4.75V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    20.6 nC @ 10 V

  • Vgs (Max):

    ±25V

  • Input Capacitance (Ciss) (Max) @ Vds:

    800 pF @ 100 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    130W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-263 (D2PAK)

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Stock:

0

1

Part Number:

TK33S10N1L-LQ

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET N-CH 100V 33A DPAK

  • Series:

    U-MOSVIII-H

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    33A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    9.7mOhm @ 16.5A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 500µA

  • Gate Charge (Qg) (Max) @ Vgs:

    33 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2250 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    125W (Tc)

  • Operating Temperature:

    175°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK+

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

Stock:

4491

1

Part Number:

SIHD14N60ET4-GE3

Manufacturer:

Vishay Siliconix

Description:

N-CHANNEL 600V

  • Series:

    E

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    13A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    309mOhm @ 7A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    64 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1205 pF @ 100 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    147W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

Stock:

8880

1

Part Number:

APT18M100S

Manufacturer:

Microchip Technology

Description:

MOSFET N-CH 1000V 18A D3PAK

  • Series:

    POWER MOS 8™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    1000 V

  • Current - Continuous Drain (Id) @ 25°C:

    18A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    700mOhm @ 9A, 10V

  • Vgs(th) (Max) @ Id:

    5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    150 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4845 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    625W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D3PAK

  • Package / Case:

    TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Stock:

0

1

Part Number:

SQA602CEJW-T1_GE3

Manufacturer:

Vishay Siliconix

Description:

AUTOMOTIVE N-CHANNEL 80 V (D-S)

  • Series:

    TrenchFET®

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    80 V

  • Current - Continuous Drain (Id) @ 25°C:

    5.63A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    94mOhm @ 3A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    8.2 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    355 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    13.6W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount, Wettable Flank

  • Supplier Device Package:

    PowerPAK®SC-70W-6

  • Package / Case:

    PowerPAK® SC-70-6

Stock:

38394

1

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