FETs, MOSFETs - Single (41758)

Series:

HEXFET®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.8V, 10V

Rds On (Max) @ Id, Vgs:

7.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

56 nC @ 5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

3480 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOIC

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

28mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

67 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1900 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

150W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchP™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

130mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

185 nC @ 10 V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

14500 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P

Package / Case:

TO-3P-3, SC-65-3

Series:

CoolMOS™ P7

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

5.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:

4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:

176 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

11570 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

300W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-3-2

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

3.8A (Ta), 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

42mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

22 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

705 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

1.2W (Ta), 1.7W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

TrenchFET®

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

17.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

80 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5900 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

68W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® SO-8

Package / Case:

PowerPAK® SO-8

Series:

-

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

81mOhm @ 12A, 18V

Vgs(th) (Max) @ Id:

4.8V @ 6.45mA

Gate Charge (Qg) (Max) @ Vgs:

64 nC @ 18 V

Vgs (Max):

+21V, -4V

Input Capacitance (Ciss) (Max) @ Vds:

1498 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

93W

Operating Temperature:

175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7LA

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

334mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 5V

Rds On (Max) @ Id, Vgs:

2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.8 nC @ 4.5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

41 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

400mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-523

Package / Case:

SOT-523

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

1.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

1.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:

5.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

8 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

185 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

7.8W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-223-3

Package / Case:

TO-261-3