FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

250 V

Current - Continuous Drain (Id) @ 25°C:

12.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

12V

Rds On (Max) @ Id, Vgs:

210mOhm @ 7.8A, 12V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

50 nC @ 12 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1980 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

75W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

U3 (SMD-0.5)

Package / Case:

3-SMD, No Lead

Series:

POWER MOS 7®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500 V

Current - Continuous Drain (Id) @ 25°C:

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

140mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

72 nC @ 10 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

3261 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247 [B]

Package / Case:

TO-247-3

Series:

HEXFET®

FET Type:

-

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

14A

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

200mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die

Package / Case:

Die

Series:

G2R™

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

1.2Ohm @ 2A, 20V

Vgs(th) (Max) @ Id:

4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

+20V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

139 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

54W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Series:

G2R™

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

1.2Ohm @ 2A, 20V

Vgs(th) (Max) @ Id:

5.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

11 nC @ 20 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

111 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

44W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-3

Package / Case:

TO-247-3

Series:

PerFET™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

26A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

7V, 10V

Rds On (Max) @ Id, Vgs:

2.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

89 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5691 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

136W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

8-PDFNU (4.9x5.75)

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

50A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

6.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

31 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2071 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

65W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK33

Package / Case:

SOT-1210, 8-LFPAK33 (5-Lead)

Series:

G2R™

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

3300 V

Current - Continuous Drain (Id) @ 25°C:

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

1.2Ohm @ 2A, 20V

Vgs(th) (Max) @ Id:

3.5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:

21 nC @ 20 V

Vgs (Max):

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

238 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

74W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA