Part Number:
MCAC45P03-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1719 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W (Tj)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DFN5060
Package / Case:
8-PowerTDFN
Stock:
0
Part Number:
PSMP025-40YEX
Manufacturer:
Nexperia
Description:
PSMP025-40YE/SOT669/LFPAK
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
39.4A
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Mounting Type:
-
Supplier Device Package:
-
Package / Case:
-
Stock:
0
Part Number:
SIRC16DP-T1-RE3
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 25-V (D-S) MOSFET W/SC
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
57A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
0.96mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Vgs (Max):
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
5150 pF @ 10 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
5W (Ta), 54.3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8
Package / Case:
PowerPAK® SO-8
Stock:
17640
Part Number:
IPTC012N06NM5ATMA1
Manufacturer:
Infineon Technologies
Description:
TRENCH 40<-<100V
Series:
OptiMOS™5
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
41A (Ta), 311A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.3V @ 143µA
Gate Charge (Qg) (Max) @ Vgs:
133 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10000 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 214W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HDSOP-16-U01
Package / Case:
16-PowerSOP Module
Stock:
5370
Part Number:
DMTH4014LFVW-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 31V~40V POWERDI333
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
11.5A (Ta), 49.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
750 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 57.7W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX
Package / Case:
8-PowerVDFN
Stock:
0
Part Number:
BUK6Y19-30PX
Manufacturer:
Nexperia
Description:
MOSFET P-CH 30V 45A LFPAK56
Series:
TrenchMOS™
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
45A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
19mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1260 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
66W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8
Package / Case:
SC-100, SOT-669
Stock:
44790
Part Number:
DMN1019USNQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 8V~24V SC59 T&R 10
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Rds On (Max) @ Id, Vgs:
10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id:
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50.6 nC @ 8 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
2426 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
680mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SC-59-3
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
0
Part Number:
SIHA11N80AE-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 800V 8A TO220
Series:
E
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
804 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
31W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220 Full Pack
Package / Case:
TO-220-3 Full Pack
Stock:
2721
Part Number:
IXTA02N250HV-TRL
Manufacturer:
IXYS
Description:
MOSFET N-CH 2500V 200MA TO263HV
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
2500 V
Current - Continuous Drain (Id) @ 25°C:
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
450Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
116 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263HV
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stock:
0
Part Number:
TSM650P02CX
Manufacturer:
Taiwan Semiconductor Corporation
Description:
-20V, -4.1A, SINGLE P-CHANNEL PO
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:
0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.4 nC @ 4.5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
515 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.56W (Tc)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
0
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