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FETs, MOSFETs - Single (41758)

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Records 41758
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Part Number:

MCAC45P03-TP

Manufacturer:

Micro Commercial Co

Description:

MOSFET

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    45A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    14mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    35 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1719 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    50W (Tj)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DFN5060

  • Package / Case:

    8-PowerTDFN

Stock:

0

1

Part Number:

PSMP025-40YEX

Manufacturer:

Nexperia

Description:

PSMP025-40YE/SOT669/LFPAK

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    39.4A

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Supplier Device Package:

    -

  • Package / Case:

    -

Stock:

0

1

Part Number:

SIRC16DP-T1-RE3

Manufacturer:

Vishay Siliconix

Description:

N-CHANNEL 25-V (D-S) MOSFET W/SC

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25 V

  • Current - Continuous Drain (Id) @ 25°C:

    57A (Ta), 60A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    0.96mOhm @ 15A, 10V

  • Vgs(th) (Max) @ Id:

    2.4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    105 nC @ 10 V

  • Vgs (Max):

    +20V, -16V

  • Input Capacitance (Ciss) (Max) @ Vds:

    5150 pF @ 10 V

  • FET Feature:

    Schottky Diode (Body)

  • Power Dissipation (Max):

    5W (Ta), 54.3W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerPAK® SO-8

  • Package / Case:

    PowerPAK® SO-8

Stock:

17640

1

Part Number:

IPTC012N06NM5ATMA1

Manufacturer:

Infineon Technologies

Description:

TRENCH 40<-<100V

  • Series:

    OptiMOS™5

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    41A (Ta), 311A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    6V, 10V

  • Rds On (Max) @ Id, Vgs:

    1.2mOhm @ 100A, 10V

  • Vgs(th) (Max) @ Id:

    3.3V @ 143µA

  • Gate Charge (Qg) (Max) @ Vgs:

    133 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    10000 pF @ 30 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    3.8W (Ta), 214W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-HDSOP-16-U01

  • Package / Case:

    16-PowerSOP Module

Stock:

5370

1

Part Number:

DMTH4014LFVW-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 31V~40V POWERDI333

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    11.5A (Ta), 49.8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    13.7mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    11.2 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    750 pF @ 20 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    3.1W (Ta), 57.7W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount, Wettable Flank

  • Supplier Device Package:

    PowerDI3333-8 (SWP) Type UX

  • Package / Case:

    8-PowerVDFN

Stock:

0

1

Part Number:

BUK6Y19-30PX

Manufacturer:

Nexperia

Description:

MOSFET P-CH 30V 45A LFPAK56

  • Series:

    TrenchMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    45A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    19mOhm @ 9.5A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    35 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1260 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    66W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    LFPAK56, Power-SO8

  • Package / Case:

    SC-100, SOT-669

Stock:

44790

1

Part Number:

DMN1019USNQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 8V~24V SC59 T&R 10

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    12 V

  • Current - Continuous Drain (Id) @ 25°C:

    9.3A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.2V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    10mOhm @ 9.7A, 4.5V

  • Vgs(th) (Max) @ Id:

    800mV @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    50.6 nC @ 8 V

  • Vgs (Max):

    ±8V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2426 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    680mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SC-59-3

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

Stock:

0

1

Part Number:

SIHA11N80AE-GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N-CH 800V 8A TO220

  • Series:

    E

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    800 V

  • Current - Continuous Drain (Id) @ 25°C:

    8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    450mOhm @ 5.5A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    42 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    804 pF @ 100 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    31W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220 Full Pack

  • Package / Case:

    TO-220-3 Full Pack

Stock:

2721

1

Part Number:

IXTA02N250HV-TRL

Manufacturer:

IXYS

Description:

MOSFET N-CH 2500V 200MA TO263HV

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    2500 V

  • Current - Continuous Drain (Id) @ 25°C:

    200mA (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    450Ohm @ 50mA, 10V

  • Vgs(th) (Max) @ Id:

    4.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    7.4 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    116 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    83W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-263HV

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Stock:

0

1

Part Number:

TSM650P02CX

Manufacturer:

Taiwan Semiconductor Corporation

Description:

-20V, -4.1A, SINGLE P-CHANNEL PO

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    4.1A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.8V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    65mOhm @ 3A, 4.5V

  • Vgs(th) (Max) @ Id:

    0.8V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    6.4 nC @ 4.5 V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    515 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.56W (Tc)

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-23

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

Stock:

0

1

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