FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

41mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8.8 nC @ 5 V

Vgs (Max):

20V

Input Capacitance (Ciss) (Max) @ Vds:

920 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

1.2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-89

Package / Case:

TO-243AA

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

11.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

9mOhm @ 11.6A, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

30 nC @ 4.5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

1696 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.9W (Ta), 12.5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN2020MD-6

Package / Case:

6-UDFN Exposed Pad

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

79A

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

31mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

232 nC @ 20 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

3020 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

310W

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

-

Package / Case:

Module

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4V, 10V

Rds On (Max) @ Id, Vgs:

46mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

60 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2100 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

50W (Ta)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263S

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

128A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

10mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

46 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2692 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

5W (Ta), 312W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263AB (D2PAK)

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

5A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

50mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

740 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

3W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PowerDI3333-8 (SWP) Type UX

Package / Case:

8-PowerVDFN

Series:

CoolMOS™ CFD7

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

90mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 470µA

Gate Charge (Qg) (Max) @ Vgs:

42 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1752 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

160W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HSOF-8-1

Package / Case:

8-PowerSFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

13A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

8.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

41 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2361 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

2W (Ta), 30W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

POWERDI3333-8

Package / Case:

8-PowerVDFN

Series:

OptiMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

6.9A (Ta), 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

33mOhm @ 53A, 10V

Vgs(th) (Max) @ Id:

4V @ 5.55mA

Gate Charge (Qg) (Max) @ Vgs:

236 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

11000 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

3.8W (Ta), 300W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO220-3

Package / Case:

TO-220-3