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SICW080N120Y-BP

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Part Number

SICW080N120Y-BP

Manufacturer

Micro Commercial Co

Description

SCHOTTKY DIODES

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

SICW080N120Y-BP PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:0 pcs

运送服务：

SICW080N120Y-BP 规格

Current - Continuous Drain (Id) @ 25°C
38A
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
18V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 1000 V
Manufacturer
Micro Commercial Co
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-247-3
Power Dissipation (Max)
220W (Tc)
Rds On (Max) @ Id, Vgs
85mOhm @ 20A, 18V
Series
-
Supplier Device Package
TO-247-3
Technology
SiC (Silicon Carbide Junction Transistor)
Vgs (Max)
+22V, -8V
Vgs(th) (Max) @ Id
3.6V @ 5mA

SICW080N120Y-BP 标签

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