FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

25mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:

0.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7.7 nC @ 4.5 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

535 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.56W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

150 V

Current - Continuous Drain (Id) @ 25°C:

74A (Ta), 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

15.4mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2200 pF @ 75 V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 170W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP Advance (5x5.75)

Package / Case:

8-PowerTDFN

Series:

POWER MOS 7®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

250mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

65 nC @ 10 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

2910 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247 [B]

Package / Case:

TO-247-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

80mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

6 nC @ 4.5 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

443 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TSOT-26

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

30mOhm @ 6.4A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

20.5 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

1808 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

1.1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TSOT-26

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Series:

CoolMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

250mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:

3.5V @ 520µA

Gate Charge (Qg) (Max) @ Vgs:

35 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1200 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

104W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO262

Package / Case:

TO-262-3 Long Leads, I2PAK, TO-262AA

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

48 V

Current - Continuous Drain (Id) @ 25°C:

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

45mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

17.4 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1024 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

74W (Tj)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN3333

Package / Case:

8-VDFN Exposed Pad

Series:

TrenchMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

118mOhm @ 2.6A, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

421 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

610mW (Ta), 10W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-236AB

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

145mOhm @ 10A, 18V

Vgs(th) (Max) @ Id:

5V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs:

21 nC @ 18 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

600 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

76W (Tc)

Operating Temperature:

175°C

Mounting Type:

Through Hole

Supplier Device Package:

TO-247

Package / Case:

TO-247-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

50mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

11 nC @ 4.5 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

1600 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.4W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3

Package / Case:

TO-236-3, SC-59, SOT-23-3