FETs, MOSFETs - Single (41758)

Series:

CoolSIC™ M1

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

141mOhm @ 8.9A, 18V

Vgs(th) (Max) @ Id:

5.7V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:

15 nC @ 18 V

Vgs (Max):

+23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

496 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

110W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-12

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

20A (Ta), 107A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

4.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

80 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4843 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

4.7W (Ta), 136W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PowerDI5060-8 (Type UX)

Package / Case:

8-PowerTDFN

Series:

OptiMOS™ 7

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

430A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

0.52mOhm @ 88A, 10V

Vgs(th) (Max) @ Id:

1.8V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:

141 nC @ 10 V

Vgs (Max):

±16V

Input Capacitance (Ciss) (Max) @ Vds:

9415 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

179W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8-43

Package / Case:

8-PowerTDFN

Series:

CoolSiC™

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

51mOhm @ 25A, 18V

Vgs(th) (Max) @ Id:

5.7V @ 7.5mA

Gate Charge (Qg) (Max) @ Vgs:

41 nC @ 18 V

Vgs (Max):

+23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

1393 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

211W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-12

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Series:

CoolSiC™

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

74mOhm @ 16.7A, 18V

Vgs(th) (Max) @ Id:

5.7V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:

28 nC @ 18 V

Vgs (Max):

+20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:

930 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

133W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO247-3-41

Package / Case:

TO-247-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

1.75mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

129 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

7400 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

150W (Tj)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN5060

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

800 V

Current - Continuous Drain (Id) @ 25°C:

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

1.1Ohm @ 1.7A, 10V

Vgs(th) (Max) @ Id:

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

5.7 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

300 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

62W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220

Package / Case:

TO-220-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

65mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

6.5 nC @ 4.5 V

Vgs (Max):

20V

Input Capacitance (Ciss) (Max) @ Vds:

750 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1.2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-89

Package / Case:

TO-243AA

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

3A

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

180mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

16.5 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

900 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

3.3W

Operating Temperature:

-55°C ~ 175°C

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-223

Package / Case:

TO-261-4, TO-261AA

Series:

CoolSiC™

FET Type:

-

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HSOF-8-1

Package / Case:

8-PowerSFN