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100 V|20A (Ta), 107A (Tc)|4.7W (Ta), 136W (Tc)
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MOSFET BVDSS: 61V~100V POWERDI50
Specifications
- Brand
- Diodes Incorporated
- Package
- PowerDI5060-8 (Type UX)
- Packaging
- —
- Weight
- —
Total Inventory
7,500pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how DMTH10H4M5LPSW from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 107A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4843 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 4.7W (Ta), 136W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount, Wettable Flank | |
| Supplier Device Package | PowerDI5060-8 (Type UX) | |
| Package / Case | 8-PowerTDFN |
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