Part Number:
MCM3006-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET N-CH DFN
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
5.4A
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
35.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
915 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.56W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020-6LE
Package / Case:
6-VDFN Exposed Pad
Stock:
0
Part Number:
TK28V65W-LQ
Manufacturer:
Toshiba Semiconductor and Storage
Description:
X35 PB-F POWER MOSFET TRANSISTOR
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
120mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
3000 pF @ 300 V
FET Feature:
-
Power Dissipation (Max):
240W (Tc)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Supplier Device Package:
4-DFN-EP (8x8)
Package / Case:
4-VSFN Exposed Pad
Stock:
14898
Part Number:
IXTA180N10T-TRL
Manufacturer:
IXYS
Description:
MOSFET N-CH 100V 180A TO263
Series:
Trench
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
151 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
480W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stock:
7149
Part Number:
SUM70042M-GE3
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 100 V (D-S) MOSFET D2P
Series:
TrenchFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Rds On (Max) @ Id, Vgs:
3.83mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
126 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6750 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263-7
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Stock:
2340
Part Number:
IXFH60N60X3
Manufacturer:
IXYS
Description:
MOSFET ULTRA JCT 600V 60A TO247
Series:
HiPerFET™, Ultra X3
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
51mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3450 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
625W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Package / Case:
TO-247-3
Stock:
3
Part Number:
SQJ461EP-T2_GE3
Manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 60-V (D-S) 175C MOSFET
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4710 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8
Package / Case:
PowerPAK® SO-8
Stock:
17982
Part Number:
DMP3021SFVW-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 25V~30V POWERDI333
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1799 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8
Package / Case:
8-PowerVDFN
Stock:
5634
Part Number:
IGT60R070D1ATMA4
Manufacturer:
Infineon Technologies
Description:
GANFET N-CH
Series:
CoolGaN™
FET Type:
N-Channel
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-10V
Input Capacitance (Ciss) (Max) @ Vds:
380 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HSOF-8-3
Package / Case:
8-PowerSFN
Stock:
8799
Part Number:
DMP21D1UTQ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 8V~24V SOT523 T&R
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
710mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.4 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
33 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
260mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523
Package / Case:
SOT-523
Stock:
0
Part Number:
SCT060HU75G3AG
Manufacturer:
STMicroelectronics
Description:
AUTOMOTIVE-GRADE SILICON CARBIDE
Series:
-
FET Type:
N-Channel
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
750 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Rds On (Max) @ Id, Vgs:
78mOhm @ 15A, 18V
Vgs(th) (Max) @ Id:
4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 18 V
Vgs (Max):
4.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
680 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
185W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
HU3PAK
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stock:
0
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