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FETs, MOSFETs - Single (41758)

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Part Number:

MCM3006-TP

Manufacturer:

Micro Commercial Co

Description:

MOSFET N-CH DFN

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    5.4A

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    35.4mOhm @ 5A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    16.2 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    915 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.56W

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DFN2020-6LE

  • Package / Case:

    6-VDFN Exposed Pad

Stock:

0

1

Part Number:

TK28V65W-LQ

Manufacturer:

Toshiba Semiconductor and Storage

Description:

X35 PB-F POWER MOSFET TRANSISTOR

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    650 V

  • Current - Continuous Drain (Id) @ 25°C:

    27.6A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    120mOhm @ 13.8A, 10V

  • Vgs(th) (Max) @ Id:

    3.5V @ 1.6mA

  • Gate Charge (Qg) (Max) @ Vgs:

    75 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3000 pF @ 300 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    240W (Tc)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    4-DFN-EP (8x8)

  • Package / Case:

    4-VSFN Exposed Pad

Stock:

14898

1

Part Number:

IXTA180N10T-TRL

Manufacturer:

IXYS

Description:

MOSFET N-CH 100V 180A TO263

  • Series:

    Trench

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    180A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    6.4mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    151 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    6900 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    480W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-263 (D2PAK)

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Stock:

7149

1

Part Number:

SUM70042M-GE3

Manufacturer:

Vishay Siliconix

Description:

N-CHANNEL 100 V (D-S) MOSFET D2P

  • Series:

    TrenchFET®

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    150A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    7.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    3.83mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    3.8V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    126 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    6750 pF @ 50 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    375W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-263-7

  • Package / Case:

    TO-263-7, D2PAK (6 Leads + Tab)

Stock:

2340

1

Part Number:

IXFH60N60X3

Manufacturer:

IXYS

Description:

MOSFET ULTRA JCT 600V 60A TO247

  • Series:

    HiPerFET™, Ultra X3

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    60A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    51mOhm @ 30A, 10V

  • Vgs(th) (Max) @ Id:

    5V @ 4mA

  • Gate Charge (Qg) (Max) @ Vgs:

    51 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3450 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    625W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-247

  • Package / Case:

    TO-247-3

Stock:

3

1

Part Number:

SQJ461EP-T2_GE3

Manufacturer:

Vishay Siliconix

Description:

P-CHANNEL 60-V (D-S) 175C MOSFET

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    16mOhm @ 14.4A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    140 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4710 pF @ 30 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    83W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerPAK® SO-8

  • Package / Case:

    PowerPAK® SO-8

Stock:

17982

1

Part Number:

DMP3021SFVW-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 25V~30V POWERDI333

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    11A (Ta), 42A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    15mOhm @ 8A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    34 nC @ 10 V

  • Vgs (Max):

    ±25V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1799 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    POWERDI3333-8

  • Package / Case:

    8-PowerVDFN

Stock:

5634

1

Part Number:

IGT60R070D1ATMA4

Manufacturer:

Infineon Technologies

Description:

GANFET N-CH

  • Series:

    CoolGaN™

  • FET Type:

    N-Channel

  • Technology:

    GaNFET (Gallium Nitride)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    31A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    1.6V @ 2.6mA

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    380 pF @ 400 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    125W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-HSOF-8-3

  • Package / Case:

    8-PowerSFN

Stock:

8799

1

Part Number:

DMP21D1UTQ-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 8V~24V SOT523 T&R

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    630mA (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.8V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    710mOhm @ 400mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    1.4 nC @ 4.5 V

  • Vgs (Max):

    ±8V

  • Input Capacitance (Ciss) (Max) @ Vds:

    33 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    260mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-523

  • Package / Case:

    SOT-523

Stock:

0

1

Part Number:

SCT060HU75G3AG

Manufacturer:

STMicroelectronics

Description:

AUTOMOTIVE-GRADE SILICON CARBIDE

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    SiC (Silicon Carbide Junction Transistor)

  • Drain to Source Voltage (Vdss):

    750 V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    15V, 18V

  • Rds On (Max) @ Id, Vgs:

    78mOhm @ 15A, 18V

  • Vgs(th) (Max) @ Id:

    4.2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    29 nC @ 18 V

  • Vgs (Max):

    4.2V @ 1mA

  • Input Capacitance (Ciss) (Max) @ Vds:

    680 pF @ 400 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    185W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    HU3PAK

  • Package / Case:

    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Stock:

0

1

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