FETs, MOSFETs - Single (41758)

Series:

HiPerFET™, Ultra X3

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

78A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

38mOhm @ 39A, 10V

Vgs(th) (Max) @ Id:

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

70 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4700 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

780W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-268HV (IXFT)

Package / Case:

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

750 V

Current - Continuous Drain (Id) @ 25°C:

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

59mOhm @ 17A, 18V

Vgs(th) (Max) @ Id:

4.8V @ 8.89mA

Gate Charge (Qg) (Max) @ Vgs:

63 nC @ 18 V

Vgs (Max):

+21V, -4V

Input Capacitance (Ciss) (Max) @ Vds:

1460 pF @ 500 V

FET Feature:

-

Power Dissipation (Max):

115W

Operating Temperature:

175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247N

Package / Case:

TO-247-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

12 V

Current - Continuous Drain (Id) @ 25°C:

15A

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 8V

Rds On (Max) @ Id, Vgs:

8mOhm @ 5A, 8V

Vgs(th) (Max) @ Id:

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

23 nC @ 10 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

1300 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

700mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN2020-6J

Package / Case:

6-WDFN Exposed Pad

Series:

OptiMOS™ 5

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

150 V

Current - Continuous Drain (Id) @ 25°C:

19.4A (Ta), 174A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

8V, 10V

Rds On (Max) @ Id, Vgs:

4.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

4.6V @ 235µA

Gate Charge (Qg) (Max) @ Vgs:

89 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

7000 pF @ 75 V

FET Feature:

-

Power Dissipation (Max):

3.8W (Ta), 300W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HSOG-8

Package / Case:

8-PowerSMD, Gull Wing

Series:

POWER MOS V®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

1000 V

Current - Continuous Drain (Id) @ 25°C:

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

500mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id:

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:

500 nC @ 10 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

7900 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Through Hole

Supplier Device Package:

T-MAX™ [B2]

Package / Case:

TO-247-3 Variant

Series:

aMOS5™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

5.3A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

110mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:

3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

72 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4140 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

8.3W (Ta), 357W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

4-DFN (8x8)

Package / Case:

4-PowerTSFN

Series:

U-MOSVI

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 10V

Rds On (Max) @ Id, Vgs:

110mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:

1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

5.1 nC @ 4.5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

210 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.2W (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

S-Mini

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

196mOhm @ 10A, 20V

Vgs(th) (Max) @ Id:

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:

26.5 nC @ 20 V

Vgs (Max):

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

513 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

122W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Series:

-

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

196mOhm @ 10A, 20V

Vgs(th) (Max) @ Id:

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:

26.5 nC @ 20 V

Vgs (Max):

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

513 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

130W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4

Package / Case:

TO-247-4

Series:

-

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

196mOhm @ 10A, 20V

Vgs(th) (Max) @ Id:

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:

26.5 nC @ 20 V

Vgs (Max):

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

513 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

130W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AD

Package / Case:

TO-247-3