FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

4.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

76 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5570 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

167W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerFlat™ (5x6)

Package / Case:

8-PowerVDFN

Series:

CoolMOS™ CFD7A

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

230mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 260µA

Gate Charge (Qg) (Max) @ Vgs:

23 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1044 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

63W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-3-10

Package / Case:

TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

1.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8.2 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

140 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

36W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

9.5A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

21mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

20 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

650 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

3.1W (Ta), 11W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-DFN-EP (3x3)

Package / Case:

8-PowerVDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500 V

Current - Continuous Drain (Id) @ 25°C:

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

3.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

12 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

175 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

69W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252AA

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

Automotive, AEC-Q101

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

20A

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:

23 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1100 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

65W (Tc)

Operating Temperature:

-55°C ~ 175°C

Mounting Type:

Surface Mount

Supplier Device Package:

8-TSON Advance-WF (3.1x3.1)

Package / Case:

8-PowerVDFN

Series:

Trench

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

50mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

60 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

3090 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

250W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220 Isolated Tab

Package / Case:

TO-220-3 Full Pack, Isolated Tab

Series:

TrenchFET®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

46mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

9.6 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

580 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

27W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® 1212-8W

Package / Case:

PowerPAK® 1212-8W

Series:

U-MOSVIII-H

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

55A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

6.5mOhm @ 27.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:

49 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3280 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

157W (Tc)

Operating Temperature:

175°C

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK+

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63