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1000 V|21A (Tc)|-
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MOSFET N-CH 1000V 21A T-MAX
Specifications
- Brand
- Microchip Technology
- Package
- T-MAX™ [B2]
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT10050B2VFRG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | POWER MOS V® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000 V | |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 500 nC @ 10 V | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | T-MAX™ [B2] | |
| Package / Case | TO-247-3 Variant |
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