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S2M0160120K

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Part Number

S2M0160120K

Manufacturer

SMC Diode Solutions

Description

MOSFET SILICON CARBIDE SIC 1200V

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

S2M0160120K PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:900 pcs

运送服务：

S2M0160120K 规格

Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
26.5 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
513 pF @ 1000 V
Manufacturer
SMC Diode Solutions
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-247-4
Power Dissipation (Max)
130W (Tc)
Rds On (Max) @ Id, Vgs
196mOhm @ 10A, 20V
Series
-
Supplier Device Package
TO-247-4
Technology
SiC (Silicon Carbide Junction Transistor)
Vgs (Max)
+20V, -5V
Vgs(th) (Max) @ Id
4V @ 2.5mA

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