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FETs, MOSFETs - Arrays (5637)

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Records 5637
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Part Number:

TSM085NB03DCR

Manufacturer:

Taiwan Semiconductor Corporation

Description:

MOSFET 2N-CH 30V 12A/51A 8PDFNU

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    12A (Ta), 51A (Tc)

  • Rds On (Max) @ Id, Vgs:

    8.5mOhm @ 12A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    20nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1091pF @ 15V

  • Power - Max:

    2W (Ta), 40W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerTDFN

  • Supplier Device Package:

    8-PDFNU (5x6)

Stock:

0

1

Part Number:

QH8KC6TCR

Manufacturer:

Rohm Semiconductor

Description:

MOSFET 2N-CH 60V 5.5A TSMT8

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    5.5A (Ta)

  • Rds On (Max) @ Id, Vgs:

    30mOhm @ 5.5A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    7.6nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    460pF @ 30V

  • Power - Max:

    1.1W (Ta)

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SMD, Flat Lead

  • Supplier Device Package:

    TSMT8

Stock:

9876

1

Part Number:

DMN1001UCA10-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 12V 20A X2-TSN1820

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    12V

  • Current - Continuous Drain (Id) @ 25°C:

    20A (Ta)

  • Rds On (Max) @ Id, Vgs:

    3.55mOhm @ 5A, 4.5V

  • Vgs(th) (Max) @ Id:

    1.4V @ 870µA

  • Gate Charge (Qg) (Max) @ Vgs:

    29nC @ 4V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2865pF @ 6V

  • Power - Max:

    1W

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    10-SMD, No Lead

  • Supplier Device Package:

    X2-TSN1820-10

Stock:

8967

1

Part Number:

AOCA36102E

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET 2N-CH 22V 30A 10DFN

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    22V

  • Current - Continuous Drain (Id) @ 25°C:

    30A

  • Rds On (Max) @ Id, Vgs:

    2.8mOhm @ 5A, 4.5V

  • Vgs(th) (Max) @ Id:

    1.25V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    37nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • Power - Max:

    3.1W

  • Operating Temperature:

    -55°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    10-SMD, No Lead

  • Supplier Device Package:

    10-AlphaDFN (3.4x1.96)

Stock:

0

1

Part Number:

BSZ0908NDXTMA2

Manufacturer:

Infineon Technologies

Description:

MOSFET 2N-CH 30V 4.8A WISON-8

  • Series:

    OptiMOS™

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate, 4.5V Drive

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    4.8A (Ta), 7.6A (Ta)

  • Rds On (Max) @ Id, Vgs:

    18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    3nC @ 4.5V, 6.4nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    340pF @ 15V, 730pF @ 15V

  • Power - Max:

    700mW (Ta), 860mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PG-WISON-8

Stock:

0

1

Part Number:

AOCA36116C

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET 24V 30A 10DFN

  • Series:

    AlphaDFN™

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    24V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Ta)

  • Rds On (Max) @ Id, Vgs:

    3.1mOhm @ 5A, 4.5V

  • Vgs(th) (Max) @ Id:

    1.2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    35nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • Power - Max:

    3.1W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    10-XFDFN

  • Supplier Device Package:

    10-AlphaDFN (3.2x2.1)

Stock:

26280

1

Part Number:

SQJB02ELP-T1_GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2N-CH 40V 30A PPAK SO8

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Tc)

  • Rds On (Max) @ Id, Vgs:

    7.5mOhm @ 6A, 10V

  • Vgs(th) (Max) @ Id:

    2.2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    32nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1700pF @ 20V

  • Power - Max:

    27W

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    PowerPAK® SO-8 Dual

  • Supplier Device Package:

    PowerPAK® SO-8 Dual

Stock:

25422

1

Part Number:

TPC8207-TE12L

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET 2N-CH 20V 6A 8-SOP

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    6A

  • Rds On (Max) @ Id, Vgs:

    20mOhm @ 4.8A, 4V

  • Vgs(th) (Max) @ Id:

    1.2V @ 200µA

  • Gate Charge (Qg) (Max) @ Vgs:

    22nC @ 5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2010pF @ 10V

  • Power - Max:

    750mW

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SOIC (0.173", 4.40mm Width)

  • Supplier Device Package:

    8-SOP (5.5x6.0)

Stock:

0

1

Part Number:

SQ3989EV-T1_BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2P-CH 30V 2.5A 6TSOP

  • Series:

    TrenchFET®

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    2.5A (Tc)

  • Rds On (Max) @ Id, Vgs:

    155mOhm @ 400mA, 10V

  • Vgs(th) (Max) @ Id:

    1.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    11.1nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • Power - Max:

    1.67W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-23-6 Thin, TSOT-23-6

  • Supplier Device Package:

    6-TSOP

Stock:

27000

1

Part Number:

DMN32D0LV-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 30V 0.68A SOT563

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    680mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    1.2Ohm @ 100mA, 4V

  • Vgs(th) (Max) @ Id:

    1.2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.62nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    44.8pF @ 15V

  • Power - Max:

    480mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

0

1

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