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TSM085NB03DCR

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Part Number

TSM085NB03DCR

Manufacturer

Taiwan Semiconductor Corporation

Description

MOSFET 2N-CH 30V 12A/51A 8PDFNU

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

TSM085NB03DCR PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:0 pcs

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TSM085NB03DCR 规格

Manufacturer
Taiwan Semiconductor Corporation
Series
-
FET Type
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs
8.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1091pF @ 15V
Power - Max
2W (Ta), 40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFNU (5x6)

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