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30V|4.8A (Ta), 7.6A (Ta)|700mW (Ta), 860mW (Ta)
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MOSFET 2N-CH 30V 4.8A WISON-8
Specifications
- Brand
- Infineon Technologies
- Package
- 8-PowerVDFN
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BSZ0908NDXTMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate, 4.5V Drive | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta), 7.6A (Ta) | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V, 6.4nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 15V, 730pF @ 15V | |
| Power - Max | 700mW (Ta), 860mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PG-WISON-8 |
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