Part Number:
DMT3009LEV-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 25V-30V POWERDI3333-8
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
DMTH8030LPDW-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 80V 28.5A POWERDI50
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
80V
Current - Continuous Drain (Id) @ 25°C:
28.5A (Tc)
Rds On (Max) @ Id, Vgs:
26mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
631pF @ 40V
Power - Max:
3.1W (Ta), 41W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerTDFN
Supplier Device Package:
PowerDI5060-8 (Type UXD)
Stock:
0
Part Number:
SQJB60EP-T1_BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 60V 30A PPAK SO8
Series:
TrenchFET®
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Rds On (Max) @ Id, Vgs:
12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1600pF @ 25V
Power - Max:
48W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
PowerPAK® SO-8 Dual
Supplier Device Package:
PowerPAK® SO-8 Dual Asymmetric
Stock:
4290
Part Number:
SP8K24HZGTB
Manufacturer:
Rohm Semiconductor
Description:
MOSFET 2N-CH 45V 6A 8SOP
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
45V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Rds On (Max) @ Id, Vgs:
25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
21.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 10V
Power - Max:
2W (Ta)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Stock:
7167
Part Number:
FF17MR12W1M1HB70BPSA1
Manufacturer:
Infineon Technologies
Description:
SIC 1200V AG-EASY1B
Series:
CoolSiC™
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
AG-EASY1B
Stock:
63
Part Number:
DMP2090UFDB-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2P-CH 20V 3.2A 6UDFN
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Rds On (Max) @ Id, Vgs:
90mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
634pF @ 10V
Power - Max:
790mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-UDFN Exposed Pad
Supplier Device Package:
U-DFN2020-6 (Type B)
Stock:
0
Part Number:
SIL3724-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET N/P-CH 30V 5.8A SOT23-6L
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
5.8A, 4.1A
Rds On (Max) @ Id, Vgs:
30mOhm @ 5.8A, 10V, 60mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
820pF @ 15V, 700pF @ 15V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6
Supplier Device Package:
SOT-23-6L
Stock:
0
Part Number:
PMDXB590UPEZ
Manufacturer:
Nexperia
Description:
MOSFET 2P-CH 20V 0.57A 6DFN
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
570mA (Ta), 2.3A (Tc)
Rds On (Max) @ Id, Vgs:
770mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
53.5pF @ 10V
Power - Max:
280mW (Ta), 6W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-XFDFN Exposed Pad
Supplier Device Package:
DFN1010B-6
Stock:
15000
Part Number:
DMN62D0UV-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 60V 0.49A SOT563
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
490mA (Ta)
Rds On (Max) @ Id, Vgs:
2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
32pF @ 30V
Power - Max:
470mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SOT-563
Stock:
8067
Part Number:
QS6K1FRATR
Manufacturer:
Rohm Semiconductor
Description:
MOSFET 2N-CH 30V 1A TSMT6
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Rds On (Max) @ Id, Vgs:
238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
77pF @ 10V
Power - Max:
900mW (Tc)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:
TSMT6 (SC-95)
Stock:
42042
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