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FETs, MOSFETs - Arrays (5637)

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Records 5637
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Part Number:

FS13MR12W2M1HPB11BPSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET

  • Series:

    -

  • FET Type:

    -

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • Power - Max:

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

51

1

Part Number:

STL52DN4LF7AG

Manufacturer:

STMicroelectronics

Description:

MOSFET 2N-CH 40V 18A POWERFLAT

  • Series:

    STripFET™ F7

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    18A (Tc)

  • Rds On (Max) @ Id, Vgs:

    16mOhm @ 6A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    9.4nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    500pF @ 25V

  • Power - Max:

    65W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PowerFlat™ (5x6)

Stock:

0

1

Part Number:

DMTH45M5SPDW-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 40V 79A POWERDI50

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    79A (Tc)

  • Rds On (Max) @ Id, Vgs:

    5.5mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    3.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    13.2nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1083pF @ 20V

  • Power - Max:

    3.3W (Ta), 60W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerTDFN

  • Supplier Device Package:

    PowerDI5060-8 (Type UXD)

Stock:

6570

1

Part Number:

DF8MR12W1M1HFB67BPSA1

Manufacturer:

Infineon Technologies

Description:

SIC 2N-CH 1200V 45A AG-EASY1B

  • Series:

    EasyPACK™

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    1200V (1.2kV)

  • Current - Continuous Drain (Id) @ 25°C:

    45A

  • Rds On (Max) @ Id, Vgs:

    16.2mOhm @ 50A, 18V

  • Vgs(th) (Max) @ Id:

    5.15V @ 20mA

  • Gate Charge (Qg) (Max) @ Vgs:

    149nC @ 18V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4400pF @ 800V

  • Power - Max:

    -

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    AG-EASY1B

Stock:

18

1

Part Number:

MSCSM120AM31CT1AG

Manufacturer:

Microchip Technology

Description:

SIC 2N-CH 1200V 89A SP1F

  • Series:

    -

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    1200V (1.2kV)

  • Current - Continuous Drain (Id) @ 25°C:

    89A (Tc)

  • Rds On (Max) @ Id, Vgs:

    31mOhm @ 40A, 20V

  • Vgs(th) (Max) @ Id:

    2.8V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    232nC @ 20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3020pF @ 1000V

  • Power - Max:

    395W (Tc)

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    SP1F

Stock:

21

1

Part Number:

DMN52D0UVA-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 50V 0.48A SOT563

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    50V

  • Current - Continuous Drain (Id) @ 25°C:

    480mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    2Ohm @ 50mA, 5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    1.5nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    39pF @ 25V

  • Power - Max:

    480mW

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

30000

1

Part Number:

BSC155N06NDATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET 2N-CH 60V 20A 8TDSON

  • Series:

    OptiMOS™-T2

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    20A (Tc)

  • Rds On (Max) @ Id, Vgs:

    15.5mOhm @ 17A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 20µA

  • Gate Charge (Qg) (Max) @ Vgs:

    29nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2250pF @ 30V

  • Power - Max:

    50W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PG-TDSON-8-4

Stock:

21720

1

Part Number:

TSM3911DCX6

Manufacturer:

Taiwan Semiconductor Corporation

Description:

MOSFET 2P-CH 20V 2.2A SOT26

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    2.2A (Ta)

  • Rds On (Max) @ Id, Vgs:

    140mOhm @ 2.2A, 4.5V

  • Vgs(th) (Max) @ Id:

    0.95V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    15.23nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    882.51pF @ 6V

  • Power - Max:

    1.15W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-23-6

  • Supplier Device Package:

    SOT-26

Stock:

0

1

Part Number:

MSCSM170AM058CT6AG

Manufacturer:

Microchip Technology

Description:

SIC 2N-CH 1700V 353A

  • Series:

    -

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    1700V (1.7kV)

  • Current - Continuous Drain (Id) @ 25°C:

    353A (Tc)

  • Rds On (Max) @ Id, Vgs:

    7.5mOhm @ 180A, 20V

  • Vgs(th) (Max) @ Id:

    3.3V @ 15mA

  • Gate Charge (Qg) (Max) @ Vgs:

    1068nC @ 20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    19800pF @ 1000V

  • Power - Max:

    1.642kW (Tc)

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    -

Stock:

3

1

Part Number:

DMN32D0LVQ-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 30V 0.68A SOT563

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    680mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    1.2Ohm @ 100mA, 4V

  • Vgs(th) (Max) @ Id:

    1.2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.62nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    44.8pF @ 15V

  • Power - Max:

    480mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

6615

1

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