Part Number:
FS13MR12W2M1HPB11BPSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
51
Part Number:
STL52DN4LF7AG
Manufacturer:
STMicroelectronics
Description:
MOSFET 2N-CH 40V 18A POWERFLAT
Series:
STripFET™ F7
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Rds On (Max) @ Id, Vgs:
16mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
500pF @ 25V
Power - Max:
65W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerVDFN
Supplier Device Package:
PowerFlat™ (5x6)
Stock:
0
Part Number:
DMTH45M5SPDW-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 40V 79A POWERDI50
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
79A (Tc)
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1083pF @ 20V
Power - Max:
3.3W (Ta), 60W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerTDFN
Supplier Device Package:
PowerDI5060-8 (Type UXD)
Stock:
6570
Part Number:
DF8MR12W1M1HFB67BPSA1
Manufacturer:
Infineon Technologies
Description:
SIC 2N-CH 1200V 45A AG-EASY1B
Series:
EasyPACK™
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
45A
Rds On (Max) @ Id, Vgs:
16.2mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:
5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:
149nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds:
4400pF @ 800V
Power - Max:
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
AG-EASY1B
Stock:
18
Part Number:
MSCSM120AM31CT1AG
Manufacturer:
Microchip Technology
Description:
SIC 2N-CH 1200V 89A SP1F
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
89A (Tc)
Rds On (Max) @ Id, Vgs:
31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
3020pF @ 1000V
Power - Max:
395W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
SP1F
Stock:
21
Part Number:
DMN52D0UVA-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 50V 0.48A SOT563
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
50V
Current - Continuous Drain (Id) @ 25°C:
480mA (Ta)
Rds On (Max) @ Id, Vgs:
2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
39pF @ 25V
Power - Max:
480mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SOT-563
Stock:
30000
Part Number:
BSC155N06NDATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 60V 20A 8TDSON
Series:
OptiMOS™-T2
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Rds On (Max) @ Id, Vgs:
15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2250pF @ 30V
Power - Max:
50W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerVDFN
Supplier Device Package:
PG-TDSON-8-4
Stock:
21720
Part Number:
TSM3911DCX6
Manufacturer:
Taiwan Semiconductor Corporation
Description:
MOSFET 2P-CH 20V 2.2A SOT26
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Rds On (Max) @ Id, Vgs:
140mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:
0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15.23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
882.51pF @ 6V
Power - Max:
1.15W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6
Supplier Device Package:
SOT-26
Stock:
0
Part Number:
MSCSM170AM058CT6AG
Manufacturer:
Microchip Technology
Description:
SIC 2N-CH 1700V 353A
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C:
353A (Tc)
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id:
3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs:
1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
19800pF @ 1000V
Power - Max:
1.642kW (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
3
Part Number:
DMN32D0LVQ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 30V 0.68A SOT563
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
680mA (Ta)
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
44.8pF @ 15V
Power - Max:
480mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SOT-563
Stock:
6615
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