FETs, MOSFETs - Arrays (5637)

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

700V

Current - Continuous Drain (Id) @ 25°C:

124A (Tc)

Rds On (Max) @ Id, Vgs:

19mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

215nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

4500pF @ 700V

Power - Max:

365W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

700V

Current - Continuous Drain (Id) @ 25°C:

689A (Tc)

Rds On (Max) @ Id, Vgs:

3.2mOhm @ 240A, 20V

Vgs(th) (Max) @ Id:

2.4V @ 24mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:

1290nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

27000pF @ 700V

Power - Max:

1882W (Tc)

Operating Temperature:

-

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

SP6C LI

Series:

-

FET Type:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

3.5A (Ta), 2.7A (Ta)

Rds On (Max) @ Id, Vgs:

50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA, 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

5nC @ 10V, 5.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

210pF @ 15V, 240pF @ 15V

Power - Max:

1.15W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SC-74, SOT-457

Supplier Device Package:

6-TSOP

Series:

TrenchFET® Gen IV

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

15.7A (Ta), 33.4A (Tc)

Rds On (Max) @ Id, Vgs:

9.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

12.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

580pF @ 15V

Power - Max:

3.7W (Ta), 16.7W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerWDFN

Supplier Device Package:

8-Power33 (3x3)

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

173A (Tc)

Rds On (Max) @ Id, Vgs:

16mOhm @ 80A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:

464nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

6040pF @ 1000V

Power - Max:

745W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

280mA

Rds On (Max) @ Id, Vgs:

2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.59nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

50pF @ 25V

Power - Max:

350mW

Operating Temperature:

-65°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-23-6

Supplier Device Package:

SOT-26

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

49A (Tc), 80A (Tc)

Rds On (Max) @ Id, Vgs:

50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.7V @ 2mA, 2.8V @ 3mA

Gate Charge (Qg) (Max) @ Vgs:

137nC @ 20V, 232nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

1990pF @ 1000V, 3020pF @ 1000V

Power - Max:

196W (Tc), 315W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

-

Power - Max:

-

Operating Temperature:

-

Mounting Type:

-

Package / Case:

-

Supplier Device Package:

-

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

300A (Tc)

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

5.6V @ 91mA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

14000pF @ 10V

Power - Max:

1260W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

Module