Part Number:
FF5MR20KM1HHPSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
MSCSM170DUM039AG
Manufacturer:
Microchip Technology
Description:
SIC 2N-CH 1700V 523A
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C:
523A (Tc)
Rds On (Max) @ Id, Vgs:
5mOhm @ 270A, 20V
Vgs(th) (Max) @ Id:
3.3V @ 22.5mA
Gate Charge (Qg) (Max) @ Vgs:
1602nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
29700pF @ 1000V
Power - Max:
2400W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
9
Part Number:
DMN3732UVTQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 25V~30V TSOT26 T&R
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
Rds On (Max) @ Id, Vgs:
460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:
0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
40.8pF @ 25V
Power - Max:
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:
TSOT-26
Stock:
0
Part Number:
LP8M3FP8TB1
Manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH SOP8G
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
PSMN029-100HLX
Manufacturer:
Nexperia
Description:
MOSFET 2N-CH 100V 30A LFPAK56D
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta)
Rds On (Max) @ Id, Vgs:
27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
29.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
3637pF @ 25V
Power - Max:
68W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-1205, 8-LFPAK56
Supplier Device Package:
LFPAK56D
Stock:
4764
Part Number:
SI1922EDH-T1-BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 20V 1.3A SC70-6
Series:
TrenchFET®
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs:
198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
740mW (Ta), 1.25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SC-70-6
Stock:
0
Part Number:
MSCC60VRM45TAPG
Manufacturer:
Microchip Technology
Description:
MOSFET 600V 40A SP6-P
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
SP6-P
Stock:
0
Part Number:
DMN52D0UDM-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 41V~60V SOT26 T&R
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
50V
Current - Continuous Drain (Id) @ 25°C:
410mA (Ta)
Rds On (Max) @ Id, Vgs:
2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
42.4pF @ 25V
Power - Max:
490mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6
Supplier Device Package:
SOT-26
Stock:
0
Part Number:
SSM6N67NU-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET 2N-CH 30V 4A 6DFN
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Rds On (Max) @ Id, Vgs:
39.1mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
310pF @ 15V
Power - Max:
2W (Ta)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Package / Case:
6-WDFN Exposed Pad
Supplier Device Package:
6-µDFN (2x2)
Stock:
31257
Part Number:
DMN53D0LV-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 50V 0.35A SOT563
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
50V
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
46pF @ 25V
Power - Max:
430mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SOT-563
Stock:
245700
每日获取来自全球众多供应商的最新优惠资讯