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1200V (1.2kV)|49A (Tc), 80A (Tc)|196W (Tc), 315W (Tc)
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PM-MOSFET-SIC-SBD-6HPD
Specifications
- Brand
- Microchip Technology
- Package
- Module
- Packaging
- —
- Weight
- —
Total Inventory
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MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MSCSM120XM50CTYZBNMG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| FET Type | Silicon Carbide (SiC) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc), 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V | |
| Vgs(th) (Max) @ Id | 2.7V @ 2mA, 2.8V @ 3mA | |
| Gate Charge (Qg) (Max) @ Vgs | 137nC @ 20V, 232nC @ 20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 1000V, 3020pF @ 1000V | |
| Power - Max | 196W (Tc), 315W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | - |
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