FETs, MOSFETs - Arrays (5637)

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

50A (Tc)

Rds On (Max) @ Id, Vgs:

9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2100pF @ 25V

Power - Max:

69W (Tj)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerLDFN

Supplier Device Package:

PDFN5060-8D

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1700V (1.7kV)

Current - Continuous Drain (Id) @ 25°C:

181A (Tc)

Rds On (Max) @ Id, Vgs:

15mOhm @ 90A, 20V

Vgs(th) (Max) @ Id:

3.2V @ 7.5mA

Gate Charge (Qg) (Max) @ Vgs:

534nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

9900pF @ 1000V

Power - Max:

862W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

-

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

5.5A (Ta)

Rds On (Max) @ Id, Vgs:

42mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

450pF @ 15V

Power - Max:

2W (Ta)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-PowerUDFN

Supplier Device Package:

HUML2020L8

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

337A (Tc)

Rds On (Max) @ Id, Vgs:

7.8mOhm @ 160A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 4mA

Gate Charge (Qg) (Max) @ Vgs:

928nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

12.08pF @ 1000V

Power - Max:

1.409kW (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

SP3F

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

3A (Ta)

Rds On (Max) @ Id, Vgs:

90mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

3.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

135pF @ 30V

Power - Max:

1.1W (Ta)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

8-SMD, Flat Lead

Supplier Device Package:

TSMT8

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

20V

Current - Continuous Drain (Id) @ 25°C:

1.2A, 1A

Rds On (Max) @ Id, Vgs:

300mOhm @ 650mA, 4.5V, 850mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

0.8nC @ 4.5V, 0.86nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

33pF @ 16V, 40pF @ 16V

Power - Max:

1.25W

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-23-6

Supplier Device Package:

SOT-23-6L

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

340mA

Rds On (Max) @ Id, Vgs:

5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

40pF @ 10V

Power - Max:

150mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

SOT-563

Series:

-

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

89A (Tc)

Rds On (Max) @ Id, Vgs:

31mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

232nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

3020pF @ 1000V

Power - Max:

395W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

SP3F

Series:

CoolSiC™

FET Type:

Silicon Carbide (SiC)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

500A (Tc)

Rds On (Max) @ Id, Vgs:

2.13mOhm @ 500A, 15V

Vgs(th) (Max) @ Id:

5.15V @ 224mA

Gate Charge (Qg) (Max) @ Vgs:

1340nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds:

39700pF @ 800V

Power - Max:

-

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Chassis Mount

Package / Case:

Module

Supplier Device Package:

AG-62MMHB

Series:

-

FET Type:

MOSFET (Metal Oxide)

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

477mA (Ta)

Rds On (Max) @ Id, Vgs:

2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

1.04nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

41pF @ 30V

Power - Max:

450mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

SOT-563