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BSM300D12P3E005

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Part Number

BSM300D12P3E005

Manufacturer

Rohm Semiconductor

Description

SIC 2N-CH 1200V 300A MODULE

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

BSM300D12P3E005 PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:18 pcs

运送服务：

BSM300D12P3E005 规格

Manufacturer
Rohm Semiconductor
Series
-
FET Type
Silicon Carbide (SiC)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
300A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 91mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Power - Max
1260W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module

BSM300D12P3E005 标签

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