Part Number:
SI1553CDL-T1-BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N/P-CH 20V 0.7A SC70-6
Series:
TrenchFET®
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs:
390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.8nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
38pF @ 10V, 43pF @ 10V
Power - Max:
290mW (Ta), 340mW (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SC-70-6
Stock:
0
Part Number:
SQJQ936EL-T1_GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 40V 100A PPAK8X8
Series:
TrenchFET®
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
7300pF @ 25V
Power - Max:
75W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
PowerPAK® 8 x 8 Dual
Supplier Device Package:
PowerPAK® 8 x 8 Dual
Stock:
0
Part Number:
MSCSM120DUM31CTBL1NG
Manufacturer:
Microchip Technology
Description:
SIC 2N-CH 1200V 79A
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
79A
Rds On (Max) @ Id, Vgs:
31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
3020pF @ 1000V
Power - Max:
310W
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
0
Part Number:
AOND62930
Manufacturer:
Alpha & Omega Semiconductor Inc.
Description:
MOSFET 2N-CH 100V 4.5A/7A 8DFN
Series:
AlphaSGT™
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs:
68mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
415pF @ 50V
Power - Max:
3.5W (Ta), 7.3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerSMD, Flat Leads
Supplier Device Package:
8-DFN (5x6)
Stock:
0
Part Number:
SSM6L14FE-TE85L-F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N/P-CH 20V 0.8A ES6
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
800mA (Ta), 720mA (Ta)
Rds On (Max) @ Id, Vgs:
240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 4.5V, 1.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
90pF @ 10V, 110pF @ 10V
Power - Max:
150mW (Ta)
Operating Temperature:
150°C
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6
Stock:
52236
Part Number:
MSCSM70HM05AG
Manufacturer:
Microchip Technology
Description:
SIC 4N-CH 700V 349A
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
700V
Current - Continuous Drain (Id) @ 25°C:
349A (Tc)
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id:
2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs:
645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
13500pF @ 700V
Power - Max:
966W (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
0
Part Number:
DMC62D2SVQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 41V~60V SOT563 T&R
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
480mA (Ta), 320mA (Ta)
Rds On (Max) @ Id, Vgs:
1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.04nC @ 10V, 1.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
41pF @ 30V, 40pF @ 25V
Power - Max:
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SOT-563
Stock:
0
Part Number:
DMP4013SPSWQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 31V~40V POWERDI506
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
BSC112N06LDATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 60V 20A 8TDSON
Series:
OptiMOS™-T2
FET Type:
MOSFET (Metal Oxide)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Rds On (Max) @ Id, Vgs:
11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:
55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
4020pF @ 30V
Power - Max:
65W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerVDFN
Supplier Device Package:
PG-TDSON-8-4
Stock:
36963
Part Number:
PSMN028-100HSX
Manufacturer:
Nexperia
Description:
MOSFET 2N-CH 100V 29A LFPAK56D
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
29A (Ta)
Rds On (Max) @ Id, Vgs:
27.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2137pF @ 25V
Power - Max:
64W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-1205, 8-LFPAK56
Supplier Device Package:
LFPAK56D
Stock:
4800
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