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FETs, MOSFETs - Arrays (5637)

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Part Number:

SI1553CDL-T1-BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N/P-CH 20V 0.7A SC70-6

  • Series:

    TrenchFET®

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)

  • Rds On (Max) @ Id, Vgs:

    390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    1.8nC @ 10V, 3nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    38pF @ 10V, 43pF @ 10V

  • Power - Max:

    290mW (Ta), 340mW (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SC-70-6

Stock:

0

1

Part Number:

SQJQ936EL-T1_GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2N-CH 40V 100A PPAK8X8

  • Series:

    TrenchFET®

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    100A (Tc)

  • Rds On (Max) @ Id, Vgs:

    2.3mOhm @ 5A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    45nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    7300pF @ 25V

  • Power - Max:

    75W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    PowerPAK® 8 x 8 Dual

  • Supplier Device Package:

    PowerPAK® 8 x 8 Dual

Stock:

0

1

Part Number:

MSCSM120DUM31CTBL1NG

Manufacturer:

Microchip Technology

Description:

SIC 2N-CH 1200V 79A

  • Series:

    -

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    1200V (1.2kV)

  • Current - Continuous Drain (Id) @ 25°C:

    79A

  • Rds On (Max) @ Id, Vgs:

    31mOhm @ 40A, 20V

  • Vgs(th) (Max) @ Id:

    2.8V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    232nC @ 20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3020pF @ 1000V

  • Power - Max:

    310W

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

AOND62930

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET 2N-CH 100V 4.5A/7A 8DFN

  • Series:

    AlphaSGT™

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    4.5A (Ta), 7A (Tc)

  • Rds On (Max) @ Id, Vgs:

    68mOhm @ 5A, 10V

  • Vgs(th) (Max) @ Id:

    2.8V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    12nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    415pF @ 50V

  • Power - Max:

    3.5W (Ta), 7.3W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerSMD, Flat Leads

  • Supplier Device Package:

    8-DFN (5x6)

Stock:

0

1

Part Number:

SSM6L14FE-TE85L-F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET N/P-CH 20V 0.8A ES6

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate, 1.5V Drive

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    800mA (Ta), 720mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    2nC @ 4.5V, 1.76nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    90pF @ 10V, 110pF @ 10V

  • Power - Max:

    150mW (Ta)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

52236

1

Part Number:

MSCSM70HM05AG

Manufacturer:

Microchip Technology

Description:

SIC 4N-CH 700V 349A

  • Series:

    -

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    700V

  • Current - Continuous Drain (Id) @ 25°C:

    349A (Tc)

  • Rds On (Max) @ Id, Vgs:

    6.4mOhm @ 120A, 20V

  • Vgs(th) (Max) @ Id:

    2.4V @ 12mA

  • Gate Charge (Qg) (Max) @ Vgs:

    645nC @ 20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    13500pF @ 700V

  • Power - Max:

    966W (Tc)

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

DMC62D2SVQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 41V~60V SOT563 T&R

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    480mA (Ta), 320mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA, 3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    1.04nC @ 10V, 1.1nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    41pF @ 30V, 40pF @ 25V

  • Power - Max:

    500mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

0

1

Part Number:

DMP4013SPSWQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 31V~40V POWERDI506

  • Series:

    -

  • FET Type:

    -

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    -

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • Power - Max:

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

BSC112N06LDATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET 2N-CH 60V 20A 8TDSON

  • Series:

    OptiMOS™-T2

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    20A (Tc)

  • Rds On (Max) @ Id, Vgs:

    11.2mOhm @ 17A, 10V

  • Vgs(th) (Max) @ Id:

    2.2V @ 28µA

  • Gate Charge (Qg) (Max) @ Vgs:

    55nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4020pF @ 30V

  • Power - Max:

    65W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PG-TDSON-8-4

Stock:

36963

1

Part Number:

PSMN028-100HSX

Manufacturer:

Nexperia

Description:

MOSFET 2N-CH 100V 29A LFPAK56D

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    29A (Ta)

  • Rds On (Max) @ Id, Vgs:

    27.5mOhm @ 5A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    34nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2137pF @ 25V

  • Power - Max:

    64W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-1205, 8-LFPAK56

  • Supplier Device Package:

    LFPAK56D

Stock:

4800

1

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