Heisener Electronics
BOM

MSCSM120HM31CT3AG

1200V (1.2kV)|89A (Tc)|395W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

SIC 4N-CH 1200V 89A SP3F

Specifications

Brand
Microchip Technology
Package
Module
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSCSM120HM31CT3AG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeSilicon Carbide (SiC)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C89A (Tc)
Rds On (Max) @ Id, Vgs31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds3020pF @ 1000V
Power - Max395W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageSP3F

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