Heisener Electronics
BOM

MSCSM120AM08CT3AG

1200V (1.2kV)|337A (Tc)|1.409kW (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

SIC 2N-CH 1200V 337A SP3F

Specifications

Brand
Microchip Technology
Package
Module
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSCSM120AM08CT3AG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeSilicon Carbide (SiC)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C337A (Tc)
Rds On (Max) @ Id, Vgs7.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id2.8V @ 4mA
Gate Charge (Qg) (Max) @ Vgs928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds12.08pF @ 1000V
Power - Max1.409kW (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageSP3F

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