Logo

FETs, MOSFETs - Arrays (5637)

Records 0
Reset All
Records 5637
Page 553/564

Part Number:

PSMN014-40HLDX

Manufacturer:

Nexperia

Description:

MOSFET 2N-CH 40V 42A LFPAK56D

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    42A (Ta)

  • Rds On (Max) @ Id, Vgs:

    13.6mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    2.2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    19.4nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1160pF @ 25V

  • Power - Max:

    46W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-1205, 8-LFPAK56

  • Supplier Device Package:

    LFPAK56D

Stock:

213

1

Part Number:

SQJ570EP-T1_BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET N/P-CH 100V 15A PPAK SO8

  • Series:

    TrenchFET®

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    15A (Tc), 9.5A (Tc)

  • Rds On (Max) @ Id, Vgs:

    45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    15nC @ 10V, 20nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    600pF @ 25V, 650pF @ 25V

  • Power - Max:

    27W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    PowerPAK® SO-8 Dual

  • Supplier Device Package:

    PowerPAK® SO-8 Dual

Stock:

9000

1

Part Number:

DMN62D2UVTQ-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    455mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    2Ohm @ 50mA, 5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.8nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    41pF @ 30V

  • Power - Max:

    500mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-23-6 Thin, TSOT-23-6

  • Supplier Device Package:

    TSOT-26

Stock:

0

1

Part Number:

BSS84KDW-TP

Manufacturer:

Micro Commercial Co

Description:

MOSFET 2P-CH 60V 0.32A SOT363

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    320mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    6Ohm @ 300mA, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    1.6nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    32pF @ 30V

  • Power - Max:

    420mW

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

13896

1

Part Number:

BSZ0907NDXTMA2

Manufacturer:

Infineon Technologies

Description:

MOSFET 2N-CH 30V 6.7A WISON-8

  • Series:

    OptiMOS™

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate, 4.5V Drive

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    6.7A (Ta), 8.5A (Ta)

  • Rds On (Max) @ Id, Vgs:

    9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    6.4nC @ 4.5V, 7.9nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    730pF @ 15V, 900pF @ 15V

  • Power - Max:

    700mW (Ta), 860mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PG-WISON-8

Stock:

0

1

Part Number:

FF2MR12W3M1HB11BPSA1

Manufacturer:

Infineon Technologies

Description:

SIC 4N-CH 1200V AG-EASY3B

  • Series:

    EasyPACK™, CoolSiC™

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    1200V (1.2kV)

  • Current - Continuous Drain (Id) @ 25°C:

    400A (Tj)

  • Rds On (Max) @ Id, Vgs:

    2.27mOhm @ 400A, 18V

  • Vgs(th) (Max) @ Id:

    5.15V @ 224mA

  • Gate Charge (Qg) (Max) @ Vgs:

    1600nC @ 18V

  • Input Capacitance (Ciss) (Max) @ Vds:

    48400pF @ 800V

  • Power - Max:

    -

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    AG-EASY3B

Stock:

27

1

Part Number:

SSM6N813R-LXHF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET 2N-CH 100V 3.5A 6TSOPF

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate, 4.5V Drive

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    3.5A (Ta)

  • Rds On (Max) @ Id, Vgs:

    112mOhm @ 3.5A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 100µA

  • Gate Charge (Qg) (Max) @ Vgs:

    3.6nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    242pF @ 15V

  • Power - Max:

    1.5W (Ta)

  • Operating Temperature:

    175°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, Flat Leads

  • Supplier Device Package:

    6-TSOP-F

Stock:

15822

1

Part Number:

AO8801A_001

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

MOSFET 2P-CH 20V 4.5A 8TSSOP

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    4.5A (Ta)

  • Rds On (Max) @ Id, Vgs:

    42mOhm @ 4.5A, 4.5V

  • Vgs(th) (Max) @ Id:

    900mV @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    11nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    905pF @ 10V

  • Power - Max:

    1.5W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-TSSOP (0.173", 4.40mm Width)

  • Supplier Device Package:

    8-TSSOP

Stock:

0

1

Part Number:

IRF40H233ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET 2N-CH 40V 65A 8TDSON

  • Series:

    StrongIRFET™

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    65A (Tc)

  • Rds On (Max) @ Id, Vgs:

    6.2mOhm @ 35A, 10V

  • Vgs(th) (Max) @ Id:

    3.9V @ 50µA

  • Gate Charge (Qg) (Max) @ Vgs:

    57nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2200pF @ 20V

  • Power - Max:

    3.8W (Ta), 50W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PG-TDSON-8-4

Stock:

0

1

Part Number:

MCACD40NP03-TP

Manufacturer:

Micro Commercial Co

Description:

MOSFET

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    40A (Tc)

  • Rds On (Max) @ Id, Vgs:

    9mOhm @ 20A, 10V, 12mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA, 2.7V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    23.6nC @ 10V, 38nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1050pF @ 15V, 1860pF @ 15V

  • Power - Max:

    50W (Tj), 54W (Tj)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerLDFN

  • Supplier Device Package:

    PDFN5060-8D

Stock:

0

1

获取最新资讯

每日获取来自全球众多供应商的最新优惠资讯