页 120 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  120/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKD06N60R
Infineon Technologies

IGBT 600V 12A 100W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 330µJ
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,560
600V
12A
18A
2.1V @ 15V, 6A
100W
330µJ
Standard
48nC
12ns/127ns
400V, 6A, 23 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRG4RC10UPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,296
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
STGFL6NC60DI
STMicroelectronics

IGBT 600V 7A 22W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
  • Power - Max: 22W
  • Switching Energy: 32µJ (on), 24µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 6.7ns/46ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封装: TO-220-3 Full Pack
库存5,376
600V
7A
18A
2.9V @ 15V, 3A
22W
32µJ (on), 24µJ (off)
Standard
12nC
6.7ns/46ns
390V, 3A, 10 Ohm, 15V
23ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
STGP6NC60H
STMicroelectronics

IGBT 600V 15A 56W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 20µJ (on), 68µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 12ns/76ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存4,480
600V
15A
21A
2.5V @ 15V, 3A
56W
20µJ (on), 68µJ (off)
Standard
13.6nC
12ns/76ns
390V, 3A, 10 Ohm, 15V
21ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGT60N60C2
IXYS

IGBT 600V 75A 480W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 480W
  • Switching Energy: 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 146nC
  • Td (on/off) @ 25°C: 18ns/95ns
  • Test Condition: 400V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存5,376
600V
75A
300A
2.5V @ 15V, 50A
480W
480µJ (off)
Standard
146nC
18ns/95ns
400V, 50A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot STGW20NB60KD
STMicroelectronics

IGBT 600V 50A 170W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 675µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: 39ns/105ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80.5ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存5,152
600V
50A
100A
2.8V @ 15V, 20A
170W
675µJ (on), 500µJ (off)
Standard
85nC
39ns/105ns
480V, 20A, 10 Ohm, 15V
80.5ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRG8CH97K10F
Infineon Technologies

IGBT 1200V 100A DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 600nC
  • Td (on/off) @ 25°C: 100ns/230ns
  • Test Condition: 600V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存6,448
1200V
-
-
2V @ 15V, 100A
-
-
Standard
600nC
100ns/230ns
600V, 100A, 1 Ohm, 15V
-
-
Surface Mount
Die
Die
hot IRGB8B60KPBF
Infineon Technologies

IGBT 600V 28A 167W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
  • Power - Max: 167W
  • Switching Energy: 160µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存11,244
600V
28A
26A
2.2V @ 15V, 8A
167W
160µJ (on), 160µJ (off)
Standard
18.2nC
23ns/140ns
400V, 5A, 100 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGT10N170
IXYS

IGBT 1700V 20A 110W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 70A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
  • Power - Max: 110W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存3,408
1700V
20A
70A
4V @ 15V, 10A
110W
-
Standard
32nC
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXDP20N60B
IXYS

IGBT 600V 32A 140W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 140W
  • Switching Energy: 900µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 20A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存5,888
600V
32A
40A
2.8V @ 15V, 20A
140W
900µJ (on), 400µJ (off)
Standard
70nC
-
300V, 20A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTB30N120IHRWG
ON Semiconductor

IGBT 1200V 60A 384W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 384W
  • Switching Energy: 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: -/230ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存2,320
1200V
60A
120A
2.5V @ 15V, 30A
384W
700µJ (off)
Standard
225nC
-/230ns
600V, 30A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot HGTG20N60B3
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 475µJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存34,356
600V
40A
160A
2V @ 15V, 20A
165W
475µJ (on), 1.05mJ (off)
Standard
80nC
-
480V, 20A, 10 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IRG4PSH71KDPBF
Infineon Technologies

IGBT 1200V 78A 350W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 156A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A
  • Power - Max: 350W
  • Switching Energy: 5.68mJ (on), 3.23mJ (off)
  • Input Type: Standard
  • Gate Charge: 410nC
  • Td (on/off) @ 25°C: 67ns/230ns
  • Test Condition: 800V, 42A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 107ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
封装: TO-274AA
库存4,352
1200V
78A
156A
3.9V @ 15V, 42A
350W
5.68mJ (on), 3.23mJ (off)
Standard
410nC
67ns/230ns
800V, 42A, 5 Ohm, 15V
107ns
-55°C ~ 150°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)
RGTH60TS65DGC11
Rohm Semiconductor

IGBT 650V 58A 194W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 58A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 194W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58nC
  • Td (on/off) @ 25°C: 27ns/105ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: TO-247-3
库存6,228
650V
58A
120A
2.1V @ 15V, 30A
194W
-
Standard
58nC
27ns/105ns
400V, 30A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
FGP3440G2_F085
Fairchild/ON Semiconductor

ECOSPARK 2 IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 26.9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
  • Power - Max: 166W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 1µs/5.3µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,500
400V
26.9A
-
1.2V @ 4V, 6A
166W
-
Logic
24nC
1µs/5.3µs
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGWA15M120DF3
STMicroelectronics

IGBT 1200V 30A 259W

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 259W
  • Switching Energy: 550µJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 26ns/122ns
  • Test Condition: 600V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: TO-247-3
库存15,612
1200V
30A
60A
2.3V @ 15V, 15A
259W
550µJ (on), 850µJ (off)
Standard
53nC
26ns/122ns
600V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IKZ75N65EL5XKSA1
Infineon Technologies

IGBT 650V 100A TO247-4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
  • Power - Max: 536W
  • Switching Energy: 1.57mJ (on), 3.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 436nC
  • Td (on/off) @ 25°C: 120ns/275ns
  • Test Condition: 400V, 75A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 59ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4
封装: TO-247-4
库存7,104
650V
100A
300A
1.35V @ 15V, 75A
536W
1.57mJ (on), 3.2mJ (off)
Standard
436nC
120ns/275ns
400V, 75A, 23 Ohm, 15V
59ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-247-4
PG-TO247-4
hot IRGP50B60PDPBF
Infineon Technologies

IGBT 600V 75A 370W TO247AC

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Power - Max: 370W
  • Switching Energy: 360µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 34ns/130ns
  • Test Condition: 390V, 33A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存59,136
600V
75A
150A
2.6V @ 15V, 50A
370W
360µJ (on), 380µJ (off)
Standard
240nC
34ns/130ns
390V, 33A, 3.3 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IKW40N120T2
Infineon Technologies

IGBT 1200V 75A 480W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 480W
  • Switching Energy: 5.25mJ
  • Input Type: Standard
  • Gate Charge: 192nC
  • Td (on/off) @ 25°C: 33ns/314ns
  • Test Condition: 600V, 40A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 258ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存193,200
1200V
75A
160A
2.2V @ 15V, 40A
480W
5.25mJ
Standard
192nC
33ns/314ns
600V, 40A, 12 Ohm, 15V
258ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
NTE3323
NTE Electronics, Inc

IGBT-1200V 25AMP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 400ns/800ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: -
Request a Quote
1200 V
25 A
50 A
4V @ 15V, 25A
200 W
-
Standard
-
400ns/800ns
-
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXYA12N250CHV
IXYS

DISC IGBT XPT-HI VOLTAGE TO-263D

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 28 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
  • Power - Max: 310 W
  • Switching Energy: 3.56mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 12ns/167ns
  • Test Condition: 1250V, 12A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 16 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封装: -
Request a Quote
2500 V
28 A
80 A
4.5V @ 15V, 12A
310 W
3.56mJ (on), 1.7mJ (off)
Standard
56 nC
12ns/167ns
1250V, 12A, 10Ohm, 15V
16 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
FGPF4533
Fairchild Semiconductor

IGBT

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 28.4 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封装: -
Request a Quote
330 V
-
200 A
1.8V @ 15V, 50A
28.4 W
-
Standard
44 nC
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220F
RGT16NL65DGTL
Rohm Semiconductor

IGBT TRENCH FIELD 650V 16A LPDS

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 94 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 13ns/33ns
  • Test Condition: 400V, 8A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
封装: -
库存3,000
650 V
16 A
24 A
2.1V @ 15V, 8A
94 W
-
Standard
21 nC
13ns/33ns
400V, 8A, 10Ohm, 15V
42 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
IGC27T120T8QX1SA1
Infineon Technologies

IGBT 1200V 25A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
-
75 A
2.42V @ 15V, 25A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
FGF65A4L
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/40

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 65 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.96V @ 15V, 40A
  • Power - Max: 72 W
  • Switching Energy: 900µJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 40ns/100ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封装: -
Request a Quote
650 V
65 A
120 A
1.96V @ 15V, 40A
72 W
900µJ (on), 900µJ (off)
Standard
75 nC
40ns/100ns
400V, 40A, 10Ohm, 15V
60 ns
175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
AFGHL50T65SQD
onsemi

AEC 101 QUALIFIED, 650V, 50A FIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 268 W
  • Switching Energy: 950µJ (on), 460µJ (off)
  • Input Type: Standard
  • Gate Charge: 102 nC
  • Td (on/off) @ 25°C: 20ns/81ns
  • Test Condition: 400V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
库存1,308
650 V
80 A
200 A
2.1V @ 15V, 50A
268 W
950µJ (on), 460µJ (off)
Standard
102 nC
20ns/81ns
400V, 50A, 4.7Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGWA30IH65DF
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 30

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
  • Power - Max: 180 W
  • Switching Energy: 123µJ (off)
  • Input Type: Standard
  • Gate Charge: 80 nC
  • Td (on/off) @ 25°C: -/200ns
  • Test Condition: 400V, 30A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: -
库存240
650 V
60 A
90 A
2.05V @ 15V, 30A
180 W
123µJ (off)
Standard
80 nC
-/200ns
400V, 30A, 22Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IXGM25N100A
IXYS

IGBT 1000V 50A 200W TO204AE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 200 W
  • Switching Energy: 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 180 nC
  • Td (on/off) @ 25°C: 100ns/500ns
  • Test Condition: 800V, 25A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-204AE
封装: -
Request a Quote
1000 V
50 A
100 A
4V @ 15V, 25A
200 W
5mJ (off)
Standard
180 nC
100ns/500ns
800V, 25A, 33Ohm, 15V
200 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
FZ1200R16KF4S1NOSA1
Infineon Technologies

FZ1200R16 - INSULATED GATE BIPOL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DGTD120T25S1PT
Diodes Incorporated

IGBT 1200V-X TO247 TUBE 0.45K

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 348 W
  • Switching Energy: 1.44mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 204 nC
  • Td (on/off) @ 25°C: 73ns/269ns
  • Test Condition: 600V, 25A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
库存1,341
1200 V
50 A
100 A
2.4V @ 15V, 25A
348 W
1.44mJ (on), 550µJ (off)
Standard
204 nC
73ns/269ns
600V, 25A, 23Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247