页 117 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  117/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGPC50UD2
Infineon Technologies

IGBT W/DIODE 600V 55A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存4,112
600V
55A
-
3V @ 15V, 27A
200W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
RJP60F5DPM-00#T1
Renesas Electronics America

IGBT 600V 80A 45W TO-3PFM

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 45W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 74nC
  • Td (on/off) @ 25°C: 53ns/90ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: TO-3PFM, SC-93-3
库存4,880
600V
80A
-
1.8V @ 15V, 40A
45W
-
Standard
74nC
53ns/90ns
400V, 30A, 5 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
HGT1S7N60A4DS
Fairchild/ON Semiconductor

IGBT 600V 34A 125W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 55µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 11ns/100ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,408
600V
34A
56A
2.7V @ 15V, 7A
125W
55µJ (on), 60µJ (off)
Standard
37nC
11ns/100ns
390V, 7A, 25 Ohm, 15V
34ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IXGP7N60C
IXYS

IGBT 600V 14A 54W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 54W
  • Switching Energy: 70µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 9ns/65ns
  • Test Condition: 480V, 7A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存3,168
600V
14A
30A
2.7V @ 15V, 7A
54W
70µJ (on), 120µJ (off)
Standard
25nC
9ns/65ns
480V, 7A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
AIKQ120N60CTXKSA1
Infineon Technologies

IC DISCRETE 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 480A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
  • Power - Max: 833W
  • Switching Energy: 4.1mJ (on), 2.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 772nC
  • Td (on/off) @ 25°C: 33ns/310ns
  • Test Condition: 400V, 120A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
封装: TO-247-3
库存7,664
600V
160A
480A
2V @ 15V, 120A
833W
4.1mJ (on), 2.8mJ (off)
Standard
772nC
33ns/310ns
400V, 120A, 3 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IRG8CH50K10F
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 245nC
  • Td (on/off) @ 25°C: 60ns/285ns
  • Test Condition: 600V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存7,168
1200V
50A
-
2V @ 15V, 50A
-
-
Standard
245nC
60ns/285ns
600V, 50A, 5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGB03N120H2ATMA1
Infineon Technologies

IGBT 1200V 9.6A 62.5W TO263-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 9.6A
  • Current - Collector Pulsed (Icm): 9.9A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 62.5W
  • Switching Energy: 290µJ
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 9.2ns/281ns
  • Test Condition: 800V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,504
1200V
9.6A
9.9A
2.8V @ 15V, 3A
62.5W
290µJ
Standard
22nC
9.2ns/281ns
800V, 3A, 82 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IXGR45N120
IXYS

IGBT 1200V 90A ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存6,896
1200V
90A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
STGW80H65FB-4
STMicroelectronics

IGBT BIPO 650V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 414nC
  • Td (on/off) @ 25°C: 84ns/280ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
封装: TO-247-4
库存3,408
650V
120A
240A
2V @ 15V, 80A
469W
2.1mJ (on), 1.5mJ (off)
Standard
414nC
84ns/280ns
400V, 80A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
IXYH40N65C3D1
IXYS

IGBT 650V 80A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
  • Power - Max: 300W
  • Switching Energy: 830µJ (on), 360µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 23ns/110ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存3,664
650V
80A
180A
2.35V @ 15V, 40A
300W
830µJ (on), 360µJ (off)
Standard
66nC
23ns/110ns
400V, 30A, 10 Ohm, 15V
120ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot FGH60N60SFTU
Fairchild/ON Semiconductor

IGBT 600V 120A 378W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 378W
  • Switching Energy: 1.79mJ (on), 670µJ (off)
  • Input Type: Standard
  • Gate Charge: 198nC
  • Td (on/off) @ 25°C: 22ns/134ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存13,584
600V
120A
180A
2.9V @ 15V, 60A
378W
1.79mJ (on), 670µJ (off)
Standard
198nC
22ns/134ns
400V, 60A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGP70N33TBM-A
IXYS

IGBT 330V TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存5,440
330V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-220-3
TO-220AB
NGTB15N120IHRWG
ON Semiconductor

IGBT 1200V 15A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 333W
  • Switching Energy: 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: -/170ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存2,464
1200V
30A
60A
2.5V @ 15V, 15A
333W
340µJ (off)
Standard
160nC
-/170ns
600V, 15A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
APT85GR120B2
Microsemi Corporation

IGBT 1200V 170A 962W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 340A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
  • Power - Max: 962W
  • Switching Energy: 6mJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 660nC
  • Td (on/off) @ 25°C: 43ns/300ns
  • Test Condition: 600V, 85A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX?
封装: TO-247-3
库存2,016
1200V
170A
340A
3.2V @ 15V, 85A
962W
6mJ (on), 3.8mJ (off)
Standard
660nC
43ns/300ns
600V, 85A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX?
AOT20B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 20A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
  • Power - Max: 227W
  • Switching Energy: 470µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 26ns/122ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 322ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存22,068
650V
40A
60A
2.15V @ 15V, 20A
227W
470µJ (on), 270µJ (off)
Standard
46nC
26ns/122ns
400V, 20A, 15 Ohm, 15V
322ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
APT50GN120L2DQ2G
Microsemi Corporation

IGBT 1200V 134A 543W TO264

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 543W
  • Switching Energy: 4495µJ (off)
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 28ns/320ns
  • Test Condition: 800V, 50A, 2.2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: -
封装: TO-264-3, TO-264AA
库存5,952
1200V
134A
150A
2.1V @ 15V, 50A
543W
4495µJ (off)
Standard
315nC
28ns/320ns
800V, 50A, 2.2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
-
IXYA50N65C3
IXYS

IGBT 650V 130A 600W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
  • Power - Max: 600W
  • Switching Energy: 1.3mJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 22ns/80ns
  • Test Condition: 400V, 36A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,352
650V
130A
250A
2.1V @ 15V, 36A
600W
1.3mJ (on), 370µJ (off)
Standard
80nC
22ns/80ns
400V, 36A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263
STGFW30NC60V
STMicroelectronics

IGBT 600V 36A 80W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 80W
  • Switching Energy: 220µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 31ns/100ns
  • Test Condition: 390V, 20A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封装: TO-3P-3 Full Pack
库存6,216
600V
36A
100A
2.5V @ 15V, 20A
80W
220µJ (on), 330µJ (off)
Standard
100nC
31ns/100ns
390V, 20A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
hot STGP7NC60H
STMicroelectronics

IGBT 600V 25A 80W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Power - Max: 80W
  • Switching Energy: 95µJ (on), 115µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 18.5ns/72ns
  • Test Condition: 390V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存4,688
600V
25A
50A
2.5V @ 15V, 7A
80W
95µJ (on), 115µJ (off)
Standard
35nC
18.5ns/72ns
390V, 7A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot HGTG11N120CND
Fairchild/ON Semiconductor

IGBT 1200V 43A 298W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
  • Power - Max: 298W
  • Switching Energy: 950µJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/180ns
  • Test Condition: 960V, 11A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存166,644
1200V
43A
80A
2.4V @ 15V, 11A
298W
950µJ (on), 1.3mJ (off)
Standard
100nC
23ns/180ns
960V, 11A, 10 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGH30N60LSDTU
Fairchild/ON Semiconductor

IGBT 600V 60A 480W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
  • Power - Max: 480W
  • Switching Energy: 1.1mJ (on), 21mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 18ns/250ns
  • Test Condition: 400V, 30A, 6.8 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存7,848
600V
60A
90A
1.4V @ 15V, 30A
480W
1.1mJ (on), 21mJ (off)
Standard
225nC
18ns/250ns
400V, 30A, 6.8 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
NGTG30N60FWG
ON Semiconductor

IGBT 600V 60A 167W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 167W
  • Switching Energy: 650µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 81ns/190ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存7,752
600V
60A
120A
1.7V @ 15V, 30A
167W
650µJ (on), 650µJ (off)
Standard
170nC
81ns/190ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGH32N170
IXYS

IGBT 1700V 75A 350W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350W
  • Switching Energy: 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1020V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存10,020
1700V
75A
200A
3.3V @ 15V, 32A
350W
11mJ (off)
Standard
155nC
45ns/270ns
1020V, 32A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
FGD3040G2-0002V
onsemi

FGD3040G2-0002V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
APT35GN120SG
Microchip Technology

IGBT NPT FS 1200V 94A D3PAK

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 94 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
  • Power - Max: 379 W
  • Switching Energy: -, 2.315mJ (off)
  • Input Type: Standard
  • Gate Charge: 220 nC
  • Td (on/off) @ 25°C: 24ns/300ns
  • Test Condition: 800V, 35A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
封装: -
库存99
1200 V
94 A
105 A
2.1V @ 15V, 35A
379 W
-, 2.315mJ (off)
Standard
220 nC
24ns/300ns
800V, 35A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
ISL9V5036P3-F085C
onsemi

ECOSPARK1 IGN-IGBT TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390 V
  • Current - Collector (Ic) (Max): 46 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: -
Request a Quote
390 V
46 A
-
1.6V @ 4V, 10A
250 W
-
Logic
32 nC
-/10.8µs
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
RGCL60TK60GC11
Rohm Semiconductor

IGBT TRNCH FIELD 600V 30A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 54 W
  • Switching Energy: 770µJ (on), 1.11mJ (off)
  • Input Type: Standard
  • Gate Charge: 68 nC
  • Td (on/off) @ 25°C: 44ns/186ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: -
库存165
600 V
30 A
120 A
1.8V @ 15V, 30A
54 W
770µJ (on), 1.11mJ (off)
Standard
68 nC
44ns/186ns
400V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
STP8057
onsemi

IGBT T0220 SPCL 400V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GWA40MS120F4AG
STMicroelectronics

IGBT TRENCH FS 1200V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 536 W
  • Switching Energy: 1.5mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147 nC
  • Td (on/off) @ 25°C: 35ns/140ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: -
Request a Quote
1200 V
80 A
120 A
2.3V @ 15V, 40A
536 W
1.5mJ (on), 3.3mJ (off)
Standard
147 nC
35ns/140ns
600V, 40A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IKB15N65EH5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 30A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 105 W
  • Switching Energy: 400µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 38 nC
  • Td (on/off) @ 25°C: 16ns/145ns
  • Test Condition: 400V, 15A, 39Ohm, 15V
  • Reverse Recovery Time (trr): 70 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: -
库存2,748
650 V
30 A
45 A
2.1V @ 15V, 15A
105 W
400µJ (on), 80µJ (off)
Standard
38 nC
16ns/145ns
400V, 15A, 39Ohm, 15V
70 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3