页 121 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  121/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SKP15N60XKSA1
Infineon Technologies

IGBT 600V 31A 139W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21 Ohm, 15V
  • Reverse Recovery Time (trr): 279ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3
库存4,688
600V
31A
62A
2.4V @ 15V, 15A
139W
570µJ
Standard
76nC
32ns/234ns
400V, 15A, 21 Ohm, 15V
279ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRG4BC30S
Infineon Technologies

IGBT 600V 34A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存3,504
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
RJH60M2DPP-M0#T2
Renesas Electronics America

IGBT 600V 25A 33.8W TO-220FL

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 33.8W
  • Switching Energy: 180µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 32ns/70ns
  • Test Condition: 300V, 12A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FL
封装: TO-220-3 Full Pack
库存6,896
600V
25A
-
2.5V @ 15V, 12A
33.8W
180µJ (on), 180µJ (off)
Standard
33nC
32ns/70ns
300V, 12A, 5 Ohm, 15V
85ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FL
STGW35NB60S
STMicroelectronics

IGBT 600V 70A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 840µJ (on), 7.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 83nC
  • Td (on/off) @ 25°C: 92ns/1.1µs
  • Test Condition: 480V, 20A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存6,272
600V
70A
250A
1.7V @ 15V, 20A
200W
840µJ (on), 7.4mJ (off)
Standard
83nC
92ns/1.1µs
480V, 20A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SGU20N40LTU
Fairchild/ON Semiconductor

IGBT 400V 45W IPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
  • Power - Max: 45W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-Pak
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存4,112
400V
-
150A
8V @ 4.5V, 150A
45W
-
Standard
-
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
I-Pak
hot AUIRGP4063D
Infineon Technologies

IGBT 600V 96A 330W TO-247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存13,356
600V
100A
144A
1.9V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
140nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
115ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7CH50K10EF
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/280ns
  • Test Condition: 600V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存4,256
1200V
35A
-
2.2V @ 15V, 25A
-
-
Standard
170nC
50ns/280ns
600V, 35A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
MMIX1X100N60B3H1
IXYS

IGBT 600V 145A 400W SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 145A
  • Current - Collector Pulsed (Icm): 440A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
  • Power - Max: 400W
  • Switching Energy: 1.9mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 143nC
  • Td (on/off) @ 25°C: 30ns/120ns
  • Test Condition: 360V, 70A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
封装: 24-PowerSMD, 21 Leads
库存6,368
600V
145A
440A
1.8V @ 15V, 70A
400W
1.9mJ (on), 2mJ (off)
Standard
143nC
30ns/120ns
360V, 70A, 2 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
IXGK82N120A3
IXYS

IGBT 1200V 260A 1250W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 260A
  • Current - Collector Pulsed (Icm): 580A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
  • Power - Max: 1250W
  • Switching Energy: 5.5mJ (on), 12.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 34ns/265ns
  • Test Condition: 600V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封装: TO-264-3, TO-264AA
库存3,568
1200V
260A
580A
2.05V @ 15V, 82A
1250W
5.5mJ (on), 12.5mJ (off)
Standard
340nC
34ns/265ns
600V, 80A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXGP24N120C3
IXYS

IGBT 1200V 48A 250W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 1.16mJ (on), 470µJ (off)
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 16ns/93ns
  • Test Condition: 600V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,776
1200V
48A
96A
4.2V @ 15V, 20A
250W
1.16mJ (on), 470µJ (off)
Standard
79nC
16ns/93ns
600V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKW50N60H3FKSA1
Infineon Technologies

IGBT 600V 100A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.36mJ
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 23ns/235ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存6,560
600V
100A
200A
2.3V @ 15V, 50A
333W
2.36mJ
Standard
315nC
23ns/235ns
400V, 50A, 7 Ohm, 15V
130ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXBH32N300
IXYS

IGBT 3000V 80A 400W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
  • Power - Max: 400W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
封装: TO-247-3
库存2,240
3000V
80A
280A
3.2V @ 15V, 32A
400W
-
Standard
142nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXBH)
IKA15N60TXKSA1
Infineon Technologies

IGBT 600V 14.7A 35.7W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14.7A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 35.7W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 17ns/188ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3 Full Pack
库存14,628
600V
14.7A
45A
2.05V @ 15V, 15A
35.7W
570µJ
Standard
87nC
17ns/188ns
400V, 15A, 15 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3
hot STGW19NC60HD
STMicroelectronics

IGBT 600V 42A 140W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 140W
  • Switching Energy: 85µJ (on), 189µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 25ns/97ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: TO-247-3
库存446,112
600V
42A
60A
2.5V @ 15V, 12A
140W
85µJ (on), 189µJ (off)
Standard
53nC
25ns/97ns
390V, 12A, 10 Ohm, 15V
31ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
APT30GS60BRDQ2G
Microsemi Corporation

IGBT 600V 54A 250W SOT227

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 113A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 16ns/360ns
  • Test Condition: 400V, 30A, 9.1 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存5,936
600V
54A
113A
3.15V @ 15V, 30A
250W
570µJ (off)
Standard
145nC
16ns/360ns
400V, 30A, 9.1 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
FGH40T120SMD_F155
Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 555W
  • Switching Energy: 2.7mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 40ns/475ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存6,688
1200V
80A
160A
2.4V @ 15V, 40A
555W
2.7mJ (on), 1.1mJ (off)
Standard
370nC
40ns/475ns
600V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RJH60F7ADPK-00#T0
Renesas Electronics America

IGBT 600V 90A 328.9W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
  • Power - Max: 328.9W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 63ns/142ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存7,344
600V
90A
-
1.75V @ 15V, 50A
328.9W
-
Standard
-
63ns/142ns
400V, 30A, 5 Ohm, 15V
140ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IGW50N60H3FKSA1
Infineon Technologies

IGBT 600V 100A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.36mJ
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 23ns/235ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存6,888
600V
100A
200A
2.3V @ 15V, 50A
333W
2.36mJ
Standard
315nC
23ns/235ns
400V, 50A, 7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SHGTG40N60A4
onsemi

SHGTG40N60A4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 625 W
  • Switching Energy: 850µJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 450 nC
  • Td (on/off) @ 25°C: 25ns/145ns
  • Test Condition: 390V, 40A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
600 V
75 A
300 A
2.7V @ 15V, 40A
625 W
850µJ (on), 370µJ (off)
Standard
450 nC
25ns/145ns
390V, 40A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
LGB8206ATI
Littelfuse Inc.

IGBT 390V 20A 150W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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-
-
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IXYH20N65C3D1
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 230 W
  • Switching Energy: 430µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: 19ns/80ns
  • Test Condition: 400V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: -
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650 V
50 A
105 A
2.5V @ 15V, 20A
230 W
430µJ (on), 350µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
34 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
GT40RR21-STA1-E
Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
  • Power - Max: 230 W
  • Switching Energy: -, 540µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: 280V, 40A, 10Ohm, 20V
  • Reverse Recovery Time (trr): 600 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
封装: -
库存63
1200 V
40 A
200 A
2.8V @ 15V, 40A
230 W
-, 540µJ (off)
Standard
-
-
280V, 40A, 10Ohm, 20V
600 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
AFGHL40T65RQDN
onsemi

IGBT FIELD STOP 650V 46A TO247-3

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 46 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
  • Power - Max: 288 W
  • Switching Energy: 1.14mJ (on), 740µJ (off)
  • Input Type: Standard
  • Gate Charge: 47 nC
  • Td (on/off) @ 25°C: 26ns/77ns
  • Test Condition: 400V, 40A, 2.5Ohm, 15V
  • Reverse Recovery Time (trr): 44 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
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650 V
46 A
160 A
1.82V @ 15V, 40A
288 W
1.14mJ (on), 740µJ (off)
Standard
47 nC
26ns/77ns
400V, 40A, 2.5Ohm, 15V
44 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIGC18T60SNCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 36ns/250ns
  • Test Condition: 400V, 20A, 16Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
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600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
36ns/250ns
400V, 20A, 16Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
STGYA50M120DF3
STMicroelectronics

IGBT TRENCH FS 1200V 100A MAX247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 535 W
  • Switching Energy: 2mJ (on), 3.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 194 nC
  • Td (on/off) @ 25°C: 38ns/258ns
  • Test Condition: 600V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 325 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: MAX247™
封装: -
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1200 V
100 A
200 A
2.2V @ 15V, 50A
535 W
2mJ (on), 3.2mJ (off)
Standard
194 nC
38ns/258ns
600V, 50A, 10Ohm, 15V
325 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
MAX247™
IKP20N60TXKSA1
Infineon Technologies

IGBT TRENCH FS 600V 40A TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 166 W
  • Switching Energy: 770µJ
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 400V, 20A, 12Ohm, 15V
  • Reverse Recovery Time (trr): 41 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3-1
封装: -
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600 V
40 A
60 A
2.05V @ 15V, 20A
166 W
770µJ
Standard
120 nC
18ns/199ns
400V, 20A, 12Ohm, 15V
41 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3-1
IKFW75N65EH5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
  • Power - Max: 148 W
  • Switching Energy: 1.8mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 144 nC
  • Td (on/off) @ 25°C: 30ns/206ns
  • Test Condition: 400V, 60A, 12Ohm, 15V
  • Reverse Recovery Time (trr): 75 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
封装: -
库存480
650 V
80 A
240 A
2.1V @ 15V, 60A
148 W
1.8mJ (on), 600µJ (off)
Standard
144 nC
30ns/206ns
400V, 60A, 12Ohm, 15V
75 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
RGTH00TK65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 35A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 72 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 225 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: -
库存1,344
650 V
35 A
200 A
2.1V @ 15V, 50A
72 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
225 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IXXX140N65B4H1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 840 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
  • Power - Max: 1200 W
  • Switching Energy: 5.75mJ (on), 2.67mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 54ns/270ns
  • Test Condition: 400V, 100A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 105 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
封装: -
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650 V
340 A
840 A
1.9V @ 15V, 120A
1200 W
5.75mJ (on), 2.67mJ (off)
Standard
250 nC
54ns/270ns
400V, 100A, 4.7Ohm, 15V
105 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
MIW25N120FA-BP
Micro Commercial Co

IGBT 1200V 25A,TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
  • Power - Max: 326 W
  • Switching Energy: 1.8mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 158ns/331ns
  • Test Condition: 600V, 25A, 18Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB
封装: -
库存5,025
1200 V
50 A
100 A
2.35V @ 15V, 25A
326 W
1.8mJ (on), 1.4mJ (off)
Standard
200 nC
158ns/331ns
600V, 25A, 18Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AB