页 118 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  118/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4BC30F-S
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,744
600V
31A
120A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4BC30W-S
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存58,380
600V
23A
92A
2.7V @ 15V, 12A
100W
130µJ (on), 130µJ (off)
Standard
51nC
25ns/99ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot NGTB50N60FLWG
ON Semiconductor

IGBT 600V 50A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 223W
  • Switching Energy: 1.1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 116ns/292ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存4,560
600V
100A
200A
1.9V @ 15V, 50A
223W
1.1mJ (on), 600µJ (off)
Standard
310nC
116ns/292ns
400V, 50A, 10 Ohm, 15V
85ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot NGB8207NT4G
ON Semiconductor

IGBT 365V 20A 165W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 365V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 4V, 20A
  • Power - Max: 165W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存177,864
365V
20A
50A
2.6V @ 4V, 20A
165W
-
Logic
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot HGTP7N60B3D
Fairchild/ON Semiconductor

IGBT 600V 14A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
  • Power - Max: 60W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 7A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存16,068
600V
14A
56A
2.1V @ 15V, 7A
60W
160µJ (on), 120µJ (off)
Standard
23nC
26ns/130ns
480V, 7A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
FGB40N6S2T
Fairchild/ON Semiconductor

IGBT 600V 75A 290W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 115µJ (on), 195µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 8ns/35ns
  • Test Condition: 390V, 20A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,344
600V
75A
180A
2.7V @ 15V, 20A
290W
115µJ (on), 195µJ (off)
Standard
35nC
8ns/35ns
390V, 20A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IXGX50N60AU1
IXYS

IGBT 600V 75A 300W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 4.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
封装: TO-3P-3 Full Pack
库存2,944
600V
75A
200A
2.7V @ 15V, 50A
300W
4.8mJ (off)
Standard
200nC
50ns/200ns
480V, 50A, 2.7 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-247AD
hot IRGS6B60KDPBF
Infineon Technologies

IGBT 600V 13A 90W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,212
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
70ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXBT2N250
IXYS

IGBT 2500V 5A 32W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 13A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
  • Power - Max: 32W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 10.6nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 920ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存6,784
2500V
5A
13A
3.5V @ 15V, 2A
32W
-
Standard
10.6nC
-
-
920ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGT15N120CD1
IXYS

IGBT 1200V 30A 150W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
  • Power - Max: 150W
  • Switching Energy: 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存6,912
1200V
30A
60A
3.8V @ 15V, 15A
150W
1.05mJ (off)
Standard
69nC
25ns/150ns
960V, 15A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot IXGH60N60C3
IXYS

IGBT 600V 75A 380W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 380W
  • Switching Energy: 800µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 21ns/70ns
  • Test Condition: 480V, 40A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存390,000
600V
75A
360A
2.5V @ 15V, 40A
380W
800µJ (on), 450µJ (off)
Standard
115nC
21ns/70ns
480V, 40A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGP12N100AU1
IXYS

IGBT 1000V 24A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 4mJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 100ns/850ns
  • Test Condition: 800V, 12A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,616
1000V
24A
48A
4V @ 15V, 12A
100W
4mJ (off)
Standard
65nC
100ns/850ns
800V, 12A, 120 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGP15H60DF
STMicroelectronics

IGBT 600V 30A 115W TO220

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 115W
  • Switching Energy: 136µJ (on), 207µJ (off)
  • Input Type: Standard
  • Gate Charge: 81nC
  • Td (on/off) @ 25°C: 24.5ns/118ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 103ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存4,544
600V
30A
60A
2V @ 15V, 15A
115W
136µJ (on), 207µJ (off)
Standard
81nC
24.5ns/118ns
400V, 15A, 10 Ohm, 15V
103ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IXA4I1200UC
IXYS

IGBT 1200V 9A 45W TO252AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 45W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 3A, 330 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,640
1200V
9A
-
2.1V @ 15V, 3A
45W
400µJ (on), 300µJ (off)
Standard
12nC
-
600V, 3A, 330 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
NGTB40N65IHRTG
ON Semiconductor

650V/40A RC IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,152
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT20GT60BRG
Microsemi Corporation

IGBT 600V 43A 174W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 174W
  • Switching Energy: 215µJ (on), 245µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 8ns/80ns
  • Test Condition: 400V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存3,792
600V
43A
80A
2.5V @ 15V, 20A
174W
215µJ (on), 245µJ (off)
Standard
100nC
8ns/80ns
400V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
RJH60D3DPP-M0#T2
Renesas Electronics America

IGBT 600V 35A 30W TO220FL

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A
  • Power - Max: 40W
  • Switching Energy: 200µJ (on), 210µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 35ns/80ns
  • Test Condition: 300V, 17A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FL
封装: TO-220-3 Full Pack
库存5,664
600V
35A
-
2.2V @ 15V, 17A
40W
200µJ (on), 210µJ (off)
Standard
37nC
35ns/80ns
300V, 17A, 5 Ohm, 15V
100ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FL
IKW40N65WR5XKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 230W
  • Switching Energy: 770µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 193nC
  • Td (on/off) @ 25°C: 42ns/432ns
  • Test Condition: 400V, 20A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 112ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存7,764
650V
80A
120A
1.8V @ 15V, 40A
230W
770µJ (on), 160µJ (off)
Standard
193nC
42ns/432ns
400V, 20A, 20 Ohm, 15V
112ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot STGW35HF60WD
STMicroelectronics

IGBT 600V 60A 200W TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 290µJ (on), 185µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 30ns/175ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存390,720
600V
60A
150A
2.5V @ 15V, 20A
200W
290µJ (on), 185µJ (off)
Standard
140nC
30ns/175ns
400V, 20A, 10 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRGB4620DPBF
Infineon Technologies

IGBT 600V 32A 140W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
  • Power - Max: 140W
  • Switching Energy: 75µJ (on), 225µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 31ns/83ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AC
封装: TO-220-3
库存8,244
600V
32A
36A
1.85V @ 15V, 12A
140W
75µJ (on), 225µJ (off)
Standard
25nC
31ns/83ns
400V, 12A, 22 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AC
hot IKW40N120H3
Infineon Technologies

IGBT 1200V 80A 483W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 483W
  • Switching Energy: 4.4mJ
  • Input Type: Standard
  • Gate Charge: 185nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 600V, 40A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 355ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存137,040
1200V
80A
160A
2.4V @ 15V, 40A
483W
4.4mJ
Standard
185nC
30ns/290ns
600V, 40A, 12 Ohm, 15V
355ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
HGTP10N40C1
Harris Corporation

IGBT 400V 10A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 17.5 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
  • Power - Max: 60 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 19 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: -
Request a Quote
400 V
10 A
17.5 A
3.2V @ 20V, 17.5A
60 W
-
Standard
19 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
RGTV60TK65DGVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 33A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 33 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 76 W
  • Switching Energy: 570µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 64 nC
  • Td (on/off) @ 25°C: 33ns/105ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: -
Request a Quote
650 V
33 A
120 A
1.9V @ 15V, 30A
76 W
570µJ (on), 500µJ (off)
Standard
64 nC
33ns/105ns
400V, 30A, 10Ohm, 15V
95 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
SIGC14T60NCX1SA7
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 15A, 18Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
21ns/110ns
300V, 15A, 18Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
STB1081L3
onsemi

TRANS IGBT CHIP N-CH 380V 15A 4P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GT40WR21-Q
Toshiba Semiconductor and Storage

IGBT 1350V 40A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A
  • Power - Max: 375 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
封装: -
库存126
1350 V
40 A
80 A
5.9V @ 15V, 40A
375 W
-
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
FGHL50T65MQDTL4
onsemi

FS4 MID SPEED IGBT 650V 50A TO24

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 268 W
  • Switching Energy: 1mJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 99 nC
  • Td (on/off) @ 25°C: 50ns/336ns
  • Test Condition: 400V, 50A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 79 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
封装: -
库存6,729
650 V
80 A
200 A
1.8V @ 15V, 50A
268 W
1mJ (on), 850µJ (off)
Standard
99 nC
50ns/336ns
400V, 50A, 30Ohm, 15V
79 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
STB1081SL3G
onsemi

IGBT D2PAK 350V SPECIAL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RJP6055DPP-90-T2
Renesas Electronics Corporation

IGBT 630V, 40A FOR PLASMA TV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AOTF15B65M3
Alpha & Omega Semiconductor Inc.

IGBT 650V 15A TO-220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 30 W
  • Switching Energy: 280µJ (on), 190µJ (off)
  • Input Type: Standard
  • Gate Charge: 25.4 nC
  • Td (on/off) @ 25°C: 10ns/68ns
  • Test Condition: 400V, 15A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 263 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封装: -
Request a Quote
650 V
30 A
45 A
2.5V @ 15V, 15A
30 W
280µJ (on), 190µJ (off)
Standard
25.4 nC
10ns/68ns
400V, 15A, 20Ohm, 15V
263 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F