页 119 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  119/148
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零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGSL4640DPBF
Infineon Technologies

DIODE 600V 24A COPAK-262

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存3,536
600V
65A
72A
1.9V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IRGR4610DTRLPBF
Infineon Technologies

IGBT 600V 16A 77W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,496
600V
16A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
13nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
APT95GR65JDU60
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 135A
  • Current - Collector Pulsed (Icm): 380A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
  • Power - Max: 446W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 29ns/226ns
  • Test Condition: 433V, 95A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封装: SOT-227-4, miniBLOC
库存5,264
650V
135A
380A
2.4V @ 15V, 95A
446W
-
Standard
420nC
29ns/226ns
433V, 95A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
IXSH24N60B
IXYS

IGBT 600V 48A 150W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 41nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 480V, 24A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
封装: TO-247-3
库存7,376
600V
48A
96A
2.5V @ 15V, 24A
150W
1.3mJ (off)
Standard
41nC
50ns/150ns
480V, 24A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
STGP14N60D
STMicroelectronics

IGBT 600V 25A 95W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
  • Power - Max: 95W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: 390V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: TO-220-3
库存4,384
600V
25A
50A
2.1V @ 15V, 7A
95W
-
Standard
-
-
390V, 7A, 10 Ohm, 15V
37ns
-
Through Hole
TO-220-3
TO-220-3
IXSP15N120B
IXYS

IGBT 1200V 30A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
  • Power - Max: 150W
  • Switching Energy: 1.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 57nC
  • Td (on/off) @ 25°C: 30ns/148ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存3,792
1200V
30A
60A
3.4V @ 15V, 15A
150W
1.75mJ (off)
Standard
57nC
30ns/148ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGP3NB60F
STMicroelectronics

IGBT 600V 6A 68W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 68W
  • Switching Energy: 125µJ (off)
  • Input Type: Standard
  • Gate Charge: 16nC
  • Td (on/off) @ 25°C: 12.5ns/105ns
  • Test Condition: 480V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存2,016
600V
6A
24A
2.4V @ 15V, 3A
68W
125µJ (off)
Standard
16nC
12.5ns/105ns
480V, 3A, 10 Ohm, 15V
45ns
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRGS6B60KPBF
Infineon Technologies

IGBT 600V 13A 90W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 26A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 90W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,488
600V
13A
26A
2.2V @ 15V, 5A
90W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4RC10SDTRRP
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,328
600V
14A
18A
1.8V @ 15V, 8A
38W
310µJ (on), 3.28mJ (off)
Standard
15nC
76ns/815ns
480V, 8A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
SGB02N120ATMA1
Infineon Technologies

IGBT 1200V 6.2A 62W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6.2A
  • Current - Collector Pulsed (Icm): 9.6A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
  • Power - Max: 62W
  • Switching Energy: 220µJ
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 23ns/260ns
  • Test Condition: 800V, 2A, 91 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,272
1200V
6.2A
9.6A
3.6V @ 15V, 2A
62W
220µJ
Standard
11nC
23ns/260ns
800V, 2A, 91 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IXBX64N250
IXYS

IGBT 2500V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 156A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
  • Power - Max: 735W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 400nC
  • Td (on/off) @ 25°C: 49ns/232ns
  • Test Condition: 1250V, 128A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): 160ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存6,144
2500V
156A
600A
3V @ 15V, 64A
735W
-
Standard
400nC
49ns/232ns
1250V, 128A, 1 Ohm, 15V
160ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
HGT1S12N60A4DS
Fairchild/ON Semiconductor

IGBT 600V 54A 167W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 17ns/96ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,840
600V
54A
96A
2.7V @ 15V, 12A
167W
55µJ (on), 50µJ (off)
Standard
78nC
17ns/96ns
390V, 12A, 10 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot STGD10NC60HT4
STMicroelectronics

IGBT 600V 20A 60W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 31.8µJ (on), 95µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.2nC
  • Td (on/off) @ 25°C: 14.2ns/72ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存20,400
600V
20A
-
2.5V @ 15V, 5A
60W
31.8µJ (on), 95µJ (off)
Standard
19.2nC
14.2ns/72ns
390V, 5A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IKW15N120T2FKSA1
Infineon Technologies

IGBT 1200V 30A 235W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 235W
  • Switching Energy: 2.05mJ
  • Input Type: Standard
  • Gate Charge: 93nC
  • Td (on/off) @ 25°C: 32ns/362ns
  • Test Condition: 600V, 15A, 41.8 Ohm, 15V
  • Reverse Recovery Time (trr): 300ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存5,664
1200V
30A
60A
2.2V @ 15V, 15A
235W
2.05mJ
Standard
93nC
32ns/362ns
600V, 15A, 41.8 Ohm, 15V
300ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXBT12N300
IXYS

IGBT 3000V 30A 160W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.4µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存7,632
3000V
30A
100A
3.2V @ 15V, 12A
160W
-
Standard
62nC
-
-
1.4µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGT64N60B3-TRL
IXYS

IGBT PT 600V 64A TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 64 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 460 W
  • Switching Energy: 1.5mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 168 nC
  • Td (on/off) @ 25°C: 25ns/138ns
  • Test Condition: 480V, 50A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 41 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: -
Request a Quote
600 V
64 A
400 A
1.8V @ 15V, 50A
460 W
1.5mJ (on), 1mJ (off)
Standard
168 nC
25ns/138ns
480V, 50A, 3Ohm, 15V
41 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
IKD04N60RC2ATMA1
Infineon Technologies

IGBT TRENCH FS 600V 8A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
  • Power - Max: 36.6 W
  • Switching Energy: 100µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 24 nC
  • Td (on/off) @ 25°C: 4ns/90ns
  • Test Condition: 400V, 4A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 80 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: -
库存44,331
600 V
8 A
12 A
2.3V @ 15V, 4A
36.6 W
100µJ (on), 40µJ (off)
Standard
24 nC
4ns/90ns
400V, 4A, 49Ohm, 15V
80 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
PCFG60T65SQF
onsemi

IGBT FIELD STOP 650V WAFER

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
封装: -
Request a Quote
650 V
-
300 A
2.1V @ 15V, 60A
-
-
Standard
79 nC
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Wafer
RGTH80TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 70A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 236 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
封装: -
库存1,800
650 V
70 A
160 A
2.1V @ 15V, 40A
234 W
-
Standard
79 nC
34ns/120ns
400V, 40A, 10Ohm, 15V
236 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
RJP4009ANS-01-Q5
Renesas Electronics Corporation

IGBT 400V 8VSON

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A
  • Power - Max: 1.8 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN
  • Supplier Device Package: 8-VSON (3x4.4)
封装: -
Request a Quote
400 V
-
150 A
9V @ 2.5V, 150A
1.8 W
-
Standard
-
-
-
-
-40°C ~ 150°C (TJ)
Surface Mount
8-VDFN
8-VSON (3x4.4)
SIGC14T60SNCX1SA6
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RJH6075DPM-N0-T0
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGB20N60SFD-F085
onsemi

IGBT FIELD STOP 600V 40A TO263

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 20A
  • Power - Max: 208 W
  • Switching Energy: 310µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 63 nC
  • Td (on/off) @ 25°C: 10ns/90ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 111 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
库存2,328
600 V
40 A
60 A
2.85V @ 15V, 20A
208 W
310µJ (on), 130µJ (off)
Standard
63 nC
10ns/90ns
400V, 20A, 10Ohm, 15V
111 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
FGH12040WD-F155
onsemi

IGBT TRENCH/FS 1200V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
  • Power - Max: 428 W
  • Switching Energy: 4.1mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 226 nC
  • Td (on/off) @ 25°C: 45ns/560ns
  • Test Condition: 600V, 40A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 71 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
1200 V
80 A
100 A
2.9V @ 15V, 40A
428 W
4.1mJ (on), 1mJ (off)
Standard
226 nC
45ns/560ns
600V, 40A, 23Ohm, 15V
71 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
BIDNW30N60H3
Bourns Inc.

IGBT TRENCH FS 600V 60A TO247NL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 230 W
  • Switching Energy: 1.85mJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 76 nC
  • Td (on/off) @ 25°C: 30ns/67ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 28 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N-3L
封装: -
库存8,238
600 V
60 A
120 A
2V @ 15V, 30A
230 W
1.85mJ (on), 450µJ (off)
Standard
76 nC
30ns/67ns
400V, 30A, 10Ohm, 15V
28 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247N-3L
IRGC100B120UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
100 A
-
3.5V @ 15V, 100A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
FGF65A3H
Sanken Electric USA Inc.

FIELD STOP IGBT WITH FRD 650V/30

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.73V @ 15V, 30A
  • Power - Max: 72 W
  • Switching Energy: 500µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 60 nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
封装: -
Request a Quote
650 V
50 A
90 A
2.73V @ 15V, 30A
72 W
500µJ (on), 400µJ (off)
Standard
60 nC
30ns/90ns
400V, 30A, 10Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
IHW30N120R5XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 60A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
  • Power - Max: 330 W
  • Switching Energy: 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 235 nC
  • Td (on/off) @ 25°C: -/330ns
  • Test Condition: 600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
库存621
1200 V
60 A
90 A
1.85V @ 15V, 30A
330 W
1.1mJ (off)
Standard
235 nC
-/330ns
600V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SGD8290NT4G
Littelfuse Inc.

IGBT N-CH 20A D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYP20N120B4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 76 A
  • Current - Collector Pulsed (Icm): 130 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 3.9mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 15ns/200ns
  • Test Condition: 960V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 47 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
封装: -
Request a Quote
1200 V
76 A
130 A
2.1V @ 15V, 20A
375 W
3.9mJ (on), 1.6mJ (off)
Standard
44 nC
15ns/200ns
960V, 20A, 10Ohm, 15V
47 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)