Part Number:
IRFB260NPBFAKMA1
Manufacturer:
Infineon Technologies
Description:
PLANAR 40<-<100V
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
220 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4220 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
380W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Stock:
0
Part Number:
IRFP3077PBFXKMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 75V 90A TO247AC
Series:
HEXFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
220 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9400 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
340W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC
Package / Case:
TO-247-3
Stock:
0
Part Number:
IQD009N06NM5ATMA1
Manufacturer:
Infineon Technologies
Description:
TRENCH 40<-<100V
Series:
OptiMOS™ 5
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
42A (Ta), 445A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
0.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
3.3V @ 163µA
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
12000 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 333W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TSON-8-U04
Package / Case:
8-PowerTDFN
Stock:
14964
Part Number:
R6520KNXC7G
Manufacturer:
Rohm Semiconductor
Description:
650V 20A TO-220FM, HIGH-SPEED SW
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
205mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1550 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
68W (Tc)
Operating Temperature:
150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FM
Package / Case:
TO-220-3 Full Pack
Stock:
2997
Part Number:
TSM035NB04LCZ-C0G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
40V, 157A, SINGLE N-CHANNEL POWE
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
111 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6350 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 156W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220
Package / Case:
TO-220-3
Stock:
11964
Part Number:
TK25S06N1L-LXHQ
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 25A DPAK
Series:
U-MOSVIII-H
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
36.8mOhm @ 12.5A, 4.5V
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
855 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
57W (Tc)
Operating Temperature:
175°C
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK+
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Stock:
10815
Part Number:
TSM60NC1R5CP-ROG
Manufacturer:
Taiwan Semiconductor Corporation
Description:
600V, 3A, SINGLE N-CHANNEL POWER
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
8.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
242 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
55W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Stock:
8571
Part Number:
SIR4606DP-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 60 V (D-S) MOSFET POWE
Series:
TrenchFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
10.5A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Rds On (Max) @ Id, Vgs:
18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
540 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.7W (Ta), 31.2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8
Package / Case:
PowerPAK® SO-8
Stock:
31503
Part Number:
SQJ409EP-T1_BE3
Manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 40-V (D-S) 175C MOSFET
Series:
TrenchFET®
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
260 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
68W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SO-8
Package / Case:
PowerPAK® SO-8
Stock:
7920
Part Number:
DMTH10H2M5STLWQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 61V~100V,POWERDI10
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
215A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
124.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8450 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
5.8W (Ta), 230.8W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI1012-8
Package / Case:
8-PowerSFN
Stock:
3396
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