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FETs, MOSFETs - Single (41758)

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Part Number:

IRFB260NPBFAKMA1

Manufacturer:

Infineon Technologies

Description:

PLANAR 40<-<100V

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    200 V

  • Current - Continuous Drain (Id) @ 25°C:

    56A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    40mOhm @ 34A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    220 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4220 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    380W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220AB

  • Package / Case:

    TO-220-3

Stock:

0

1

Part Number:

IRFP3077PBFXKMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 75V 90A TO247AC

  • Series:

    HEXFET®

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    75 V

  • Current - Continuous Drain (Id) @ 25°C:

    120A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    3.3mOhm @ 75A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    220 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    9400 pF @ 50 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    340W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-247AC

  • Package / Case:

    TO-247-3

Stock:

0

1

Part Number:

IQD009N06NM5ATMA1

Manufacturer:

Infineon Technologies

Description:

TRENCH 40<-<100V

  • Series:

    OptiMOS™ 5

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    42A (Ta), 445A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    6V, 10V

  • Rds On (Max) @ Id, Vgs:

    0.9mOhm @ 50A, 10V

  • Vgs(th) (Max) @ Id:

    3.3V @ 163µA

  • Gate Charge (Qg) (Max) @ Vgs:

    150 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    12000 pF @ 30 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    3W (Ta), 333W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-TSON-8-U04

  • Package / Case:

    8-PowerTDFN

Stock:

14964

1

Part Number:

R6520KNXC7G

Manufacturer:

Rohm Semiconductor

Description:

650V 20A TO-220FM, HIGH-SPEED SW

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    650 V

  • Current - Continuous Drain (Id) @ 25°C:

    20A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    205mOhm @ 9.5A, 10V

  • Vgs(th) (Max) @ Id:

    5V @ 630µA

  • Gate Charge (Qg) (Max) @ Vgs:

    40 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1550 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    68W (Tc)

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220FM

  • Package / Case:

    TO-220-3 Full Pack

Stock:

2997

1

Part Number:

TSM035NB04LCZ-C0G

Manufacturer:

Taiwan Semiconductor Corporation

Description:

40V, 157A, SINGLE N-CHANNEL POWE

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    18A (Ta), 157A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    3.5mOhm @ 18A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    111 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    6350 pF @ 20 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2W (Ta), 156W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220

  • Package / Case:

    TO-220-3

Stock:

11964

1

Part Number:

TK25S06N1L-LXHQ

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET N-CH 60V 25A DPAK

  • Series:

    U-MOSVIII-H

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    25A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    36.8mOhm @ 12.5A, 4.5V

  • Vgs(th) (Max) @ Id:

    2.5V @ 100µA

  • Gate Charge (Qg) (Max) @ Vgs:

    15 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    855 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    57W (Tc)

  • Operating Temperature:

    175°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK+

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

Stock:

10815

1

Part Number:

TSM60NC1R5CP-ROG

Manufacturer:

Taiwan Semiconductor Corporation

Description:

600V, 3A, SINGLE N-CHANNEL POWER

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    3A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    1.5Ohm @ 1A, 10V

  • Vgs(th) (Max) @ Id:

    5.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    8.1 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    242 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    55W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-252 (DPAK)

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

Stock:

8571

1

Part Number:

SIR4606DP-T1-GE3

Manufacturer:

Vishay Siliconix

Description:

N-CHANNEL 60 V (D-S) MOSFET POWE

  • Series:

    TrenchFET®

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    60 V

  • Current - Continuous Drain (Id) @ 25°C:

    10.5A (Ta), 16A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    7.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    18.5mOhm @ 4A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    13.5 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    540 pF @ 30 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    3.7W (Ta), 31.2W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerPAK® SO-8

  • Package / Case:

    PowerPAK® SO-8

Stock:

31503

1

Part Number:

SQJ409EP-T1_BE3

Manufacturer:

Vishay Siliconix

Description:

P-CHANNEL 40-V (D-S) 175C MOSFET

  • Series:

    TrenchFET®

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    60A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    7mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    260 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    11000 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    68W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PowerPAK® SO-8

  • Package / Case:

    PowerPAK® SO-8

Stock:

7920

1

Part Number:

DMTH10H2M5STLWQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 61V~100V,POWERDI10

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100 V

  • Current - Continuous Drain (Id) @ 25°C:

    215A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    2.5mOhm @ 30A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    124.4 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    8450 pF @ 50 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    5.8W (Ta), 230.8W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    POWERDI1012-8

  • Package / Case:

    8-PowerSFN

Stock:

3396

1

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