FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

165mOhm @ 11.3A, 10V

Vgs(th) (Max) @ Id:

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

45 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2000 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

245W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247

Package / Case:

TO-247-3

Series:

CoolMOS™ CFD7

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

125mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:

31 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1330 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

127W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HSOF-8-1

Package / Case:

8-PowerSFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

315mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:

5V @ 430µA

Gate Charge (Qg) (Max) @ Vgs:

27.5 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1050 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

60W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-3PF

Package / Case:

TO-3P-3 Full Pack

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

59mOhm @ 20A, 18V

Vgs(th) (Max) @ Id:

5V @ 6.7mA

Gate Charge (Qg) (Max) @ Vgs:

57 nC @ 18 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1969 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

182W (Tc)

Operating Temperature:

175°C

Mounting Type:

Through Hole

Supplier Device Package:

TO-247

Package / Case:

TO-247-3

Series:

OptiMOS™ 5

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

11.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

3.9V @ 36µA

Gate Charge (Qg) (Max) @ Vgs:

29 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2300 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 100W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TSDSON-8 FL

Package / Case:

8-PowerTDFN

Series:

EF

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

105mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

51 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

2301 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

142W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK®10 x 12

Package / Case:

8-PowerBSFN

Series:

TrenchFET®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

18.8A (Ta), 81A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

7.5V, 10V

Rds On (Max) @ Id, Vgs:

6.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

70 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3250 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

5.4W (Ta), 100W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® SO-8DC

Package / Case:

PowerPAK® SO-8

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

2.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

166 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

10051 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

375W (Tj)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-3

Package / Case:

TO-247-3

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

E

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

156mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

122 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

2774 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

39W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220 Full Pack

Package / Case:

TO-220-3 Full Pack