FETs, MOSFETs - Single (41758)

Series:

E

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

80mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

63 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

2557 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

227W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AC

Package / Case:

TO-247-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

99mOhm @ 11.7A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

62 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

2587 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

329W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247

Package / Case:

TO-247-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

60A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

8.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

19 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1322 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

59W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK33

Package / Case:

SOT-1210, 8-LFPAK33 (5-Lead)

Series:

OptiMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

150 V

Current - Continuous Drain (Id) @ 25°C:

190A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

8V, 10V

Rds On (Max) @ Id, Vgs:

3.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

4.6V @ 257µA

Gate Charge (Qg) (Max) @ Vgs:

98 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

7700 pF @ 75 V

FET Feature:

-

Power Dissipation (Max):

319W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HSOF-8

Package / Case:

8-PowerSFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

400 V

Current - Continuous Drain (Id) @ 25°C:

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

800mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

16 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

760 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

132W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220

Package / Case:

TO-220-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

660mA

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

520mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

175 pF @ 16 V

FET Feature:

-

Power Dissipation (Max):

200mW (Ta)

Operating Temperature:

-55°C ~ 150°C

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-323

Package / Case:

SC-70, SOT-323

Series:

LoRing™

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

3300 V

Current - Continuous Drain (Id) @ 25°C:

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

1.2Ohm @ 2A, 20V

Vgs(th) (Max) @ Id:

3.5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:

21 nC @ 20 V

Vgs (Max):

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

238 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

74W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7

Package / Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

TrenchFET®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

40 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2350 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

62.5W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® 1212-8W

Package / Case:

PowerPAK® 1212-8W

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

12 V

Current - Continuous Drain (Id) @ 25°C:

14.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

6mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id:

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

29.5 nC @ 10 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

1246 pF @ 6 V

FET Feature:

-

Power Dissipation (Max):

1.1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

U-DFN2020-6 (Type F)

Package / Case:

6-UDFN Exposed Pad