FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

300mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

40 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

488 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

104.2W (Tj)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252 (DPAK)

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

27.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

130mOhm @ 13.8A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 1.6mA

Gate Charge (Qg) (Max) @ Vgs:

90 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

3000 pF @ 300 V

FET Feature:

-

Power Dissipation (Max):

230W (Tc)

Operating Temperature:

150°C

Mounting Type:

Through Hole

Supplier Device Package:

TO-247

Package / Case:

TO-247-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

100A

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

4.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

73 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5469 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

51W (Tj)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DFN5060

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

380mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18.8 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

981 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

125W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252 (DPAK)

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

380mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18.8 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

981 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

33W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

ITO-220

Package / Case:

TO-220-3 Full Pack, Isolated Tab

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

380mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18.8 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

981 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

125W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-251 (IPAK)

Package / Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

OptiMOS™ 6

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

15A (Ta), 97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

8V, 10V

Rds On (Max) @ Id, Vgs:

6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

3.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

33 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2500 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

3W (Ta), 125W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8 FL

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4.5V

Rds On (Max) @ Id, Vgs:

150mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

193 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

700mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

2.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

69.6 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5220 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

2.83W (Ta), 125W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PowerDI5060-8 (Type UX)

Package / Case:

8-PowerTDFN