FETs, MOSFETs - Single (41758)

Series:

aMOS5™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

8.5A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

600mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14.5 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

900 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

26W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220F

Package / Case:

TO-220-3 Full Pack

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

1Ohm @ 2A, 20V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

13 nC @ 20 V

Vgs (Max):

+22V, -6V

Input Capacitance (Ciss) (Max) @ Vds:

200 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

60W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AD

Package / Case:

TO-247-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

630mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

710mOhm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.4 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

33 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

260mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-523

Package / Case:

SOT-523

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

8.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

14.4mOhm @ 8.2A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

46 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2154 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

1.8W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

MLPAK33

Package / Case:

8-PowerVDFN

Series:

OptiMOS™ 6

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

62A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

7V, 10V

Rds On (Max) @ Id, Vgs:

0.55mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:

3V @ 145µA

Gate Charge (Qg) (Max) @ Vgs:

170 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

11144 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

250W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HSOF-5-5

Package / Case:

5-PowerSFN

Series:

-

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

16V, 20V

Rds On (Max) @ Id, Vgs:

330mOhm @ 5A, 20V

Vgs(th) (Max) @ Id:

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

26 nC @ 18 V

Vgs (Max):

+22V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

357 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

97W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AB

Package / Case:

TO-247-3

Series:

CoolMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

125mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:

32 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1566 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

160W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-HDSOP-22-1

Package / Case:

22-PowerBSOP Module

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

60A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

8.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

27 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1814 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

59W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK33

Package / Case:

SOT-1210, 8-LFPAK33 (5-Lead)

Series:

TrenchMOS™

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 8V

Rds On (Max) @ Id, Vgs:

49mOhm @ 4A, 8V

Vgs(th) (Max) @ Id:

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

10 nC @ 4.5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

679 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

610mW (Ta), 8.3W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-236AB

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

77mOhm @ 17A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

64 nC @ 5 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

2200 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

150W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3