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R6024KNZ4C13

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Part Number

R6024KNZ4C13

Manufacturer

Rohm Semiconductor

Description

MOSFET N-CH 600V 24A TO247

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

R6024KNZ4C13 PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:1800 pcs

运送服务：

R6024KNZ4C13 规格

Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
Manufacturer
Rohm Semiconductor
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package / Case
TO-247-3
Power Dissipation (Max)
245W (Tc)
Rds On (Max) @ Id, Vgs
165mOhm @ 11.3A, 10V
Series
-
Supplier Device Package
TO-247
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
5V @ 1mA

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