FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

130mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

56 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2350 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

305W (Tc)

Operating Temperature:

150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247

Package / Case:

TO-247-3

Series:

OptiMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

21A (Ta), 137A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

3.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

49 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3800 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 107W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PG-TTFN-9-1

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

21 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

901 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

78W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

92A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

7.8mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

34 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1950 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

1.6W (Ta), 100W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PowerDI5060-8 (Type UX)

Package / Case:

8-PowerTDFN

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4V

Rds On (Max) @ Id, Vgs:

123mOhm @ 1A, 4V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

1.5 nC @ 4 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

123 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

500mW (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

UFM

Package / Case:

3-SMD, Flat Leads

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

800 V

Current - Continuous Drain (Id) @ 25°C:

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

950mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

502 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

104W (Tj)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB (H)

Package / Case:

TO-220-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

45 V

Current - Continuous Drain (Id) @ 25°C:

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4V, 10V

Rds On (Max) @ Id, Vgs:

27mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

47.6 nC @ 5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4100 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

2W (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

115mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

23.2 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1283 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

1.1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TSOT-26

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Series:

U-MOSVI

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 10V

Rds On (Max) @ Id, Vgs:

50mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

7.9 nC @ 4.5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

560 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

500mW (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

ES6

Package / Case:

SOT-563, SOT-666

Series:

OptiMOS®-P2

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

10.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:

55 nC @ 10 V

Vgs (Max):

+5V, -16V

Input Capacitance (Ciss) (Max) @ Vds:

3770 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

58W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3-11

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63