FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4V

Rds On (Max) @ Id, Vgs:

48mOhm @ 2A, 4V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

5.9 nC @ 4 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

400 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

500mW (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

UFM

Package / Case:

3-SMD, Flat Leads

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

100mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

105 nC @ 20 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1700 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

270W (Tc)

Operating Temperature:

-55°C ~ 200°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

HiP247™

Package / Case:

TO-247-3

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

HEXFET®

FET Type:

-

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

6.6A

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

480mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die

Package / Case:

Die

Series:

TrenchFET®

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

14mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

95 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

6000 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

45W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® SO-8

Package / Case:

PowerPAK® SO-8

Series:

HEXFET®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

4.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

210 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

9620 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

370W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247AC

Package / Case:

TO-247-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500 V

Current - Continuous Drain (Id) @ 25°C:

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

1.5Ohm @ 1.6A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

16 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

603 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

42W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220

Package / Case:

TO-220-3

Series:

OptiMOS™ 5

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

1.95mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 154µA

Gate Charge (Qg) (Max) @ Vgs:

123 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

8970 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

224W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7

Package / Case:

TO-263-7, D2PAK (6 Leads + Tab)

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

28mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14.5 nC @ 8 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

803 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

800mW

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

5.3Ohm @ 230mA, 10V

Vgs(th) (Max) @ Id:

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

34 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

200mW (Ta)

Operating Temperature:

150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SST3

Package / Case:

TO-236-3, SC-59, SOT-23-3