FETs, MOSFETs - Single (41758)

Series:

TrenchFET® Gen V

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

150 V

Current - Continuous Drain (Id) @ 25°C:

14.8A (Ta), 59.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

7.5V, 10V

Rds On (Max) @ Id, Vgs:

10.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

54 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2733 pF @ 75 V

FET Feature:

-

Power Dissipation (Max):

5.7W (Ta), 92.5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® SO-8

Package / Case:

PowerPAK® SO-8

Series:

OptiMOS™5

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

31A (Ta), 193A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

7V, 10V

Rds On (Max) @ Id, Vgs:

1.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

3.4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:

67 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4800 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

3W (Ta), 115W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8 FL

Package / Case:

8-PowerTDFN

Series:

StrongIRFET™ 2

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

19A (Ta), 117A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

5.05mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 84µA

Gate Charge (Qg) (Max) @ Vgs:

76 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3600 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

3.8W (Ta), 150W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7

Package / Case:

TO-263-7, D2PAK (6 Leads + Tab)

Series:

TrenchFET®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

7.5V, 10V

Rds On (Max) @ Id, Vgs:

11.4mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

110 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3930 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

375W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263 (D2PAK)

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Series:

aMOS5™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

20 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

955 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

131W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220

Package / Case:

TO-220-3

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

75mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:

2.4V @ 1mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:

56 nC @ 20 V

Vgs (Max):

+23V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1175 pF @ 700 V

FET Feature:

-

Power Dissipation (Max):

130W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D3PAK

Package / Case:

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

700 V

Current - Continuous Drain (Id) @ 25°C:

39A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

75mOhm @ 20A, 20V

Vgs(th) (Max) @ Id:

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

56 nC @ 20 V

Vgs (Max):

+23V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1175 pF @ 700 V

FET Feature:

-

Power Dissipation (Max):

143W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-3

Package / Case:

TO-247-3

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

60A

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

8.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

100 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4400 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

37 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2193 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

2.2W (Ta), 12.5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

10A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

37 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2118 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

2.6W (Ta), 125W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252 (DPAK)

Package / Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63