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20 V|3.2A (Ta)|500mW (Ta)
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MOSFET N-CH 20V 3.5A SC70
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- UFM
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how SSM3K121TU from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V | |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 2A, 4V | |
| Vgs(th) (Max) @ Id | 1V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 4 V | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Operating Temperature | 150°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | UFM | |
| Package / Case | 3-SMD, Flat Leads |
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