FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

6.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

24mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

440 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

667mW (Ta), 7.5W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SC-74, SOT-457

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

6.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

24mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

18 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

597 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

560mW (Ta), 6.25mW (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SC-74, SOT-457

Series:

TrenchFET®

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4.5V

Rds On (Max) @ Id, Vgs:

240mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

2.5 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

330 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

3W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Package / Case:

TO-236-3, SC-59, SOT-23-3

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 10V

Rds On (Max) @ Id, Vgs:

47mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

17 nC @ 10 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

780 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

2W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP

Package / Case:

SC-74, SOT-457

Series:

-

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

90mOhm @ 18A, 20V

Vgs(th) (Max) @ Id:

5.8V @ 20mA

Gate Charge (Qg) (Max) @ Vgs:

67 nC @ 20 V

Vgs (Max):

±25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1680 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

272W (Tc)

Operating Temperature:

-55°C ~ 175°C

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)

Package / Case:

TO-3P-3, SC-65-3

Series:

CoolMOS™PFD7

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

1Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

6 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

230 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

26W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO251-3

Package / Case:

TO-251-3 Short Leads, IPak, TO-251AA

Series:

CoolMOS™ P7

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

45mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 1.08mA

Gate Charge (Qg) (Max) @ Vgs:

90 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3891 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

201W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-3-2

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

50 V

Current - Continuous Drain (Id) @ 25°C:

370mA

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 10V

Rds On (Max) @ Id, Vgs:

1.5Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id:

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

1.5 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

58 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

250mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-323

Package / Case:

SC-70, SOT-323

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

TrenchFET® Gen IV

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

19.1A (Ta), 65.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

7.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

87 nC @ 10 V

Vgs (Max):

±25V

Input Capacitance (Ciss) (Max) @ Vds:

3250 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

4.8W (Ta), 56.8W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

PowerPAK® SO-8

Package / Case:

PowerPAK® SO-8