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30V|1A (Ta)|900mW (Tc)
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MOSFET 2N-CH 30V 1A TSMT6
Specifications
- Brand
- Rohm Semiconductor
- Package
- SOT-23-6 Thin, TSOT-23-6
- Packaging
- —
- Weight
- —
Total Inventory
42,042pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how QS6K1FRATR from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) | |
| Rds On (Max) @ Id, Vgs | 238mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 77pF @ 10V | |
| Power - Max | 900mW (Tc) | |
| Operating Temperature | 150°C | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | TSMT6 (SC-95) |
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