Part Number:
DMN2991UDA-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 20V 0.45A 6DFN
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
450mA (Ta)
Rds On (Max) @ Id, Vgs:
990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
21.5pF @ 16V
Power - Max:
310mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-SMD, No Lead
Supplier Device Package:
X2-DFN0806-6
Stock:
168192
Part Number:
MSCSM70XM75CTYZBNMG
Manufacturer:
Microchip Technology
Description:
PM-MOSFET-SIC-SBD-6HPD
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
700V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc), 52A (Tc)
Rds On (Max) @ Id, Vgs:
75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V
Vgs(th) (Max) @ Id:
2.4V @ 1mA, 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:
56nC @ 20V, 99nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
1175pF @ 700V, 2010pF @ 700V
Power - Max:
90W (Tc), 141W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
0
Part Number:
UM6K1NA-TPQ2
Manufacturer:
Micro Commercial Co
Description:
MOSFET
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
500mA
Rds On (Max) @ Id, Vgs:
750mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
28pF @ 15V
Power - Max:
300mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SOT-363
Stock:
0
Part Number:
DMN2053UFDBQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2N-CH 20V 4.6A 6UDFN
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.6A (Ta)
Rds On (Max) @ Id, Vgs:
35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
369pF @ 10V
Power - Max:
820mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-UDFN Exposed Pad
Supplier Device Package:
U-DFN2020-6 (Type B)
Stock:
0
Part Number:
SQJ912AEP-T2_GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 40V 30A PPAK SO8
Series:
TrenchFET®
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Rds On (Max) @ Id, Vgs:
9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1835pF @ 20V
Power - Max:
48W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
PowerPAK® SO-8 Dual
Supplier Device Package:
PowerPAK® SO-8 Dual
Stock:
0
Part Number:
SIZ340BDT-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 30V 16.9A 8PWR33
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Rds On (Max) @ Id, Vgs:
8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.6nC @ 10V, 23.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
550pF @ 15V, 1065pF @ 15V
Power - Max:
3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerWDFN
Supplier Device Package:
8-Power33 (3x3)
Stock:
18267
Part Number:
MSCSM120HM083AG
Manufacturer:
Microchip Technology
Description:
SIC 4N-CH 1200V 251A
Series:
-
FET Type:
Silicon Carbide (SiC)
FET Feature:
-
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
251A (Tc)
Rds On (Max) @ Id, Vgs:
10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id:
2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs:
696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
9000pF @ 1000V
Power - Max:
1.042kW (Tc)
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
-
Stock:
0
Part Number:
DMP68D1LVQ-13
Manufacturer:
Diodes Incorporated
Description:
BSS FAMILY SOT563 T&R 10K
Series:
-
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
238mA (Ta)
Rds On (Max) @ Id, Vgs:
8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
42pF @ 30V
Power - Max:
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SOT-563
Stock:
0
Part Number:
SISF04DN-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 30V 30A PPAK 1212-8
Series:
TrenchFET® Gen IV
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
30A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs:
4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 15V
Power - Max:
5.2W (Ta), 69.4W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
PowerPAK® 1212-8SCD
Supplier Device Package:
PowerPAK® 1212-8SCD
Stock:
18000
Part Number:
SQJ912AEP-T2_BE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET 2N-CH 40V 30A PPAK SO8
Series:
TrenchFET®
FET Type:
MOSFET (Metal Oxide)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Rds On (Max) @ Id, Vgs:
9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1835pF @ 20V
Power - Max:
48W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
PowerPAK® SO-8 Dual
Supplier Device Package:
PowerPAK® SO-8 Dual
Stock:
0
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