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FETs, MOSFETs - Arrays (5637)

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Records 5637
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Part Number:

DMN2991UDA-7B

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 20V 0.45A 6DFN

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    450mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    990mOhm @ 100mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.35nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    21.5pF @ 16V

  • Power - Max:

    310mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    X2-DFN0806-6

Stock:

168192

1

Part Number:

MSCSM70XM75CTYZBNMG

Manufacturer:

Microchip Technology

Description:

PM-MOSFET-SIC-SBD-6HPD

  • Series:

    -

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    700V

  • Current - Continuous Drain (Id) @ 25°C:

    31A (Tc), 52A (Tc)

  • Rds On (Max) @ Id, Vgs:

    75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V

  • Vgs(th) (Max) @ Id:

    2.4V @ 1mA, 2.7V @ 2mA

  • Gate Charge (Qg) (Max) @ Vgs:

    56nC @ 20V, 99nC @ 20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1175pF @ 700V, 2010pF @ 700V

  • Power - Max:

    90W (Tc), 141W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

UM6K1NA-TPQ2

Manufacturer:

Micro Commercial Co

Description:

MOSFET

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    500mA

  • Rds On (Max) @ Id, Vgs:

    750mOhm @ 300mA, 10V

  • Vgs(th) (Max) @ Id:

    1.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    1.28nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    28pF @ 15V

  • Power - Max:

    300mW

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

DMN2053UFDBQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 20V 4.6A 6UDFN

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    20V

  • Current - Continuous Drain (Id) @ 25°C:

    4.6A (Ta)

  • Rds On (Max) @ Id, Vgs:

    35mOhm @ 5A, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    7.7nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    369pF @ 10V

  • Power - Max:

    820mW

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-UDFN Exposed Pad

  • Supplier Device Package:

    U-DFN2020-6 (Type B)

Stock:

0

1

Part Number:

SQJ912AEP-T2_GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2N-CH 40V 30A PPAK SO8

  • Series:

    TrenchFET®

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Tc)

  • Rds On (Max) @ Id, Vgs:

    9.3mOhm @ 9.7A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    38nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1835pF @ 20V

  • Power - Max:

    48W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    PowerPAK® SO-8 Dual

  • Supplier Device Package:

    PowerPAK® SO-8 Dual

Stock:

0

1

Part Number:

SIZ340BDT-T1-GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2N-CH 30V 16.9A 8PWR33

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)

  • Rds On (Max) @ Id, Vgs:

    8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    2.4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    12.6nC @ 10V, 23.5nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    550pF @ 15V, 1065pF @ 15V

  • Power - Max:

    3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerWDFN

  • Supplier Device Package:

    8-Power33 (3x3)

Stock:

18267

1

Part Number:

MSCSM120HM083AG

Manufacturer:

Microchip Technology

Description:

SIC 4N-CH 1200V 251A

  • Series:

    -

  • FET Type:

    Silicon Carbide (SiC)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    1200V (1.2kV)

  • Current - Continuous Drain (Id) @ 25°C:

    251A (Tc)

  • Rds On (Max) @ Id, Vgs:

    10.4mOhm @ 120A, 20V

  • Vgs(th) (Max) @ Id:

    2.8V @ 9mA

  • Gate Charge (Qg) (Max) @ Vgs:

    696nC @ 20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    9000pF @ 1000V

  • Power - Max:

    1.042kW (Tc)

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    Module

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

DMP68D1LVQ-13

Manufacturer:

Diodes Incorporated

Description:

BSS FAMILY SOT563 T&R 10K

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    238mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    8Ohm @ 100mA, 5V

  • Vgs(th) (Max) @ Id:

    2.1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.6nC @ 5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    42pF @ 30V

  • Power - Max:

    500mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

0

1

Part Number:

SISF04DN-T1-GE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2N-CH 30V 30A PPAK 1212-8

  • Series:

    TrenchFET® Gen IV

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Ta), 108A (Tc)

  • Rds On (Max) @ Id, Vgs:

    4mOhm @ 7A, 10V

  • Vgs(th) (Max) @ Id:

    2.3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    60nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2600pF @ 15V

  • Power - Max:

    5.2W (Ta), 69.4W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    PowerPAK® 1212-8SCD

  • Supplier Device Package:

    PowerPAK® 1212-8SCD

Stock:

18000

1

Part Number:

SQJ912AEP-T2_BE3

Manufacturer:

Vishay Siliconix

Description:

MOSFET 2N-CH 40V 30A PPAK SO8

  • Series:

    TrenchFET®

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    30A (Tc)

  • Rds On (Max) @ Id, Vgs:

    9.3mOhm @ 9.7A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    38nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1835pF @ 20V

  • Power - Max:

    48W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    PowerPAK® SO-8 Dual

  • Supplier Device Package:

    PowerPAK® SO-8 Dual

Stock:

0

1

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