Heisener Electronics
BOM

BSZ0907NDXTMA2

30V|6.7A (Ta), 8.5A (Ta)|700mW (Ta), 860mW (Ta)
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MOSFET 2N-CH 30V 6.7A WISON-8

Specifications

Brand
Infineon Technologies
Package
8-PowerVDFN
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSZ0907NDXTMA2 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.7A (Ta), 8.5A (Ta)
Rds On (Max) @ Id, Vgs9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.4nC @ 4.5V, 7.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds730pF @ 15V, 900pF @ 15V
Power - Max700mW (Ta), 860mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-WISON-8

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