Heisener Electronics
BOM

IRF40H233ATMA1

40V|65A (Tc)|3.8W (Ta), 50W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 40V 65A 8TDSON

Specifications

Brand
Infineon Technologies
Package
8-PowerVDFN
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRF40H233ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesStrongIRFET™
FET TypeMOSFET (Metal Oxide)
FET Feature-
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Rds On (Max) @ Id, Vgs6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 20V
Power - Max3.8W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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