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Bipolar (BJT) - Single, Pre-Biased (4216)

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FJV4101RMTF

Part Number:

FJV4101RMTF

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS PNP 200MW SOT23-3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7 kOhms

  • Resistor - Emitter Base (R2):

    4.7 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3 (TO-236)

Stock:

496

1
FJV3103RMTF

Part Number:

FJV3103RMTF

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS NPN 200MW SOT23-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    22 kOhms

  • Resistor - Emitter Base (R2):

    22 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    56 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3 (TO-236)

Stock:

110

1
FJN3314RTA

Part Number:

FJN3314RTA

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS NPN 300MW TO92-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

367

1

Part Number:

PDTC123JE,115

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 150MW SC75

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    -

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SC-75

Stock:

121

1
FJV4102RMTF

Part Number:

FJV4102RMTF

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS PNP 200MW SOT23-3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3 (TO-236)

Stock:

329

1
FJV3115RMTF

Part Number:

FJV3115RMTF

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS NPN 200MW SOT23-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    33 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3 (TO-236)

Stock:

127

1

Part Number:

RN2107ACT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.1W CST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    80mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

132

1

Part Number:

RN2118(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.1W SSM

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

368

1

Part Number:

RN2117(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.1W SSM

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    4.7 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

492

1

Part Number:

RN2106(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.1W SSM

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

129

1

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