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Bipolar (BJT) - Single, Pre-Biased (4216)

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Part Number:

RN2107CT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.05W CST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    50mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

194

1

Part Number:

RN2106CT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.05W CST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Resistor - Base (R1):

    4.7 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    50mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

208

1

Part Number:

RN2105CT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.05W CST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    50mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

301

1

Part Number:

RN2104CT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.05W CST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Resistor - Base (R1):

    47 kOhms

  • Resistor - Emitter Base (R2):

    47 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    50mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

160

1

Part Number:

RN2103CT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.05W CST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Resistor - Base (R1):

    22 kOhms

  • Resistor - Emitter Base (R2):

    22 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    50mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

205

1

Part Number:

RN2102CT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.05W CST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    60 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    50mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

259

1

Part Number:

RN2101CT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 0.05W CST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Resistor - Base (R1):

    4.7 kOhms

  • Resistor - Emitter Base (R2):

    4.7 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    50mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

407

1

Part Number:

RN1110(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 0.1W SSM

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7 kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

207

1

Part Number:

RN1112ACT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 0.1W CST3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    80mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    22 kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    -

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

312

1

Part Number:

RN1111ACT(TPL3)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 0.1W CST3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    80mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10 kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    -

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-101, SOT-883

  • Supplier Device Package:

    CST3

Stock:

278

1

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